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Single N-Channel Logic Level Power MOSFET 100V, 23A, 56mΩ, DPAK 4 LEAD Single Gauge Surface Mount, 2500-REEL
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
13AC3884
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Newark | Mosfet, N-Ch, 100V, 23A, To-252, Transistor Polarity:N Channel, Continuous Drain Current Id:23A, Drain Source Voltage Vds:100V, On Resistance Rds(On):0.044Ohm, Rds(On) Test Voltage Vgs:4.5V, Threshold Voltage Vgs:2V, Power Rohs Compliant: Yes |Onsemi NTD6415ANLT4G Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 1730 |
|
$1.2000 / $1.7200 | Buy Now |
DISTI #
75R2678
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Newark | Power Mosfet 100V 23A 56 Mohm Single N-Channel Dpak Logic Level/ Reel Rohs Compliant: Yes |Onsemi NTD6415ANLT4G Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
|
$0.8260 / $1.1200 | Buy Now |
DISTI #
13AC6211
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Newark | Mosfet, N-Ch, 100V, 23A, To-252, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:23A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2V, Msl:- Rohs Compliant: Yes |Onsemi NTD6415ANLT4G Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
|
$1.0600 | Buy Now |
DISTI #
NTD6415ANLT4GOSCT-ND
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DigiKey | MOSFET N-CH 100V 23A DPAK Min Qty: 1 Lead time: 31 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
2505 In Stock |
|
$0.8403 / $1.9400 | Buy Now |
DISTI #
NTD6415ANLT4G
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Avnet Americas | Trans MOSFET N-CH 100V 23A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: NTD6415ANLT4G) RoHS: Not Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 31 Weeks, 0 Days Container: Reel | 0 |
|
$0.8710 / $0.9750 | Buy Now |
DISTI #
863-NTD6415ANLT4G
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Mouser Electronics | MOSFET 100V HD3E NCH RoHS: Compliant | 1693 |
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$0.8400 / $1.9400 | Buy Now |
DISTI #
70467520
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RS | NTD6415ANLT4G N-channel MOSFET Transistor, 23 A, 100 V, 3-Pin DPAK | ON Semiconductor NTD6415ANLT4G RoHS: Not Compliant Min Qty: 10 Package Multiple: 1 Container: Bulk | 0 |
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$1.4900 / $1.7600 | RFQ |
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Future Electronics | Single N-Channel 100 V 83 W 20 nC Silicon Surface Mount Mosfet - TO-252-3 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Lead time: 31 Weeks Container: Reel | 0Reel |
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$0.8400 | Buy Now |
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Future Electronics | Single N-Channel 100 V 83 W 20 nC Silicon Surface Mount Mosfet - TO-252-3 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Lead time: 31 Weeks Container: Reel | 0Reel |
|
$0.8400 | Buy Now |
DISTI #
NTD6415ANLT4G
|
TME | Transistor: N-MOSFET, unipolar, 100V, 16A, Idm: 80A, 83W, DPAK Min Qty: 1 | 0 |
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$0.9900 / $1.9100 | RFQ |
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NTD6415ANLT4G
onsemi
Buy Now
Datasheet
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Compare Parts:
NTD6415ANLT4G
onsemi
Single N-Channel Logic Level Power MOSFET 100V, 23A, 56mΩ, DPAK 4 LEAD Single Gauge Surface Mount, 2500-REEL
|
Pbfree Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ONSEMI | |
Part Package Code | DPAK 4 LEAD Single Gauge Surface Mount | |
Package Description | CASE 369AA-01, 3 PIN | |
Pin Count | 4 | |
Manufacturer Package Code | 369AA | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 56 Weeks | |
Samacsys Manufacturer | onsemi | |
Avalanche Energy Rating (Eas) | 79 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 23 A | |
Drain-source On Resistance-Max | 0.056 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 70 pF | |
JESD-30 Code | R-PDSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 83 W | |
Pulsed Drain Current-Max (IDM) | 80 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for NTD6415ANLT4G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NTD6415ANLT4G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
2SK3600-01SJ | Power Field-Effect Transistor, 20A I(D), 100V, 0.062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | Fuji Electric Co Ltd | NTD6415ANLT4G vs 2SK3600-01SJ |
STP20N10 | 20A, 100V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN | STMicroelectronics | NTD6415ANLT4G vs STP20N10 |
BUZ21SMD | Power Field-Effect Transistor, 21A I(D), 100V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 | Infineon Technologies AG | NTD6415ANLT4G vs BUZ21SMD |
RFK25N18 | Power Field-Effect Transistor, 25A I(D), 180V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE | Harris Semiconductor | NTD6415ANLT4G vs RFK25N18 |
RFH25N20 | Power Field-Effect Transistor, 25A I(D), 200V, 1.875ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218AC | Harris Semiconductor | NTD6415ANLT4G vs RFH25N20 |
RFH25N20 | 25A, 200V, 1.875ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218AC | Intersil Corporation | NTD6415ANLT4G vs RFH25N20 |
STP20N10L | 20A, 100V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN | STMicroelectronics | NTD6415ANLT4G vs STP20N10L |
IRFS4228TRLPBF | Power Field-Effect Transistor, 83A I(D), 150V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3 | International Rectifier | NTD6415ANLT4G vs IRFS4228TRLPBF |
SUM75N15-18P-E3 | Power Field-Effect Transistor, 75A I(D), 150V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | Vishay Intertechnologies | NTD6415ANLT4G vs SUM75N15-18P-E3 |
SUM75N15-18P-E3 | TRANSISTOR 75 A, 150 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT, TO-263, 3 PIN, FET General Purpose Power | Vishay Siliconix | NTD6415ANLT4G vs SUM75N15-18P-E3 |