Part Details for NE76000L by California Eastern Laboratories (CEL)
Overview of NE76000L by California Eastern Laboratories (CEL)
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Internet of Things (IoT)
Environmental Monitoring
Financial Technology (Fintech)
Smart Cities
Transportation and Logistics
Agriculture Technology
Telecommunications
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Automotive
Consumer Electronics
Education and Research
Security and Surveillance
Audio and Video Systems
Computing and Data Storage
Healthcare
Renewable Energy
Entertainment and Gaming
Robotics and Drones
Part Details for NE76000L
NE76000L CAD Models
NE76000L Part Data Attributes
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NE76000L
California Eastern Laboratories (CEL)
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Datasheet
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NE76000L
California Eastern Laboratories (CEL)
RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | CALIFORNIA EASTERN LABORATORIES | |
| Package Description | UNCASED CHIP, R-XUUC-N6 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Additional Feature | LOW NOISE | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 5 V | |
| Drain Current-Max (ID) | 0.08 A | |
| FET Technology | METAL SEMICONDUCTOR | |
| Highest Frequency Band | K BAND | |
| JESD-30 Code | R-XUUC-N6 | |
| Number of Elements | 1 | |
| Number of Terminals | 6 | |
| Operating Mode | DEPLETION MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | UNCASED CHIP | |
| Polarity/Channel Type | N-CHANNEL | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | NO LEAD | |
| Terminal Position | UPPER | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | GALLIUM ARSENIDE |
Alternate Parts for NE76000L
This table gives cross-reference parts and alternative options found for NE76000L. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NE76000L, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| NE38018-T1-A | RF Small Signal Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Hetero-junction FET, PLASTIC, SUPERMINI-4 | NEC Compound Semiconductor Devices Ltd | NE76000L vs NE38018-T1-A |
| FHR02X | RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE | SUMITOMO ELECTRIC Industries Ltd | NE76000L vs FHR02X |
| NE27200 | RF Small Signal Field-Effect Transistor, KA Band, Silicon, N-Channel, Hetero-junction FET, DIE-4 | NEC Electronics Group | NE76000L vs NE27200 |
| NE33200 | RF Small Signal Field-Effect Transistor, 1-Element, X Band, Silicon, N-Channel, Hetero-junction FET, DIE-4 | California Eastern Laboratories (CEL) | NE76000L vs NE33200 |
| NE76100M | RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, DIE-5 | NEC Electronics America Inc | NE76000L vs NE76100M |
| NE76000L | RF Small Signal Field-Effect Transistor, 2-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, | NEC Electronics America Inc | NE76000L vs NE76000L |
| FHX05X | RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE | SUMITOMO ELECTRIC Industries Ltd | NE76000L vs FHX05X |
| FHX06X | RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE | FUJITSU Limited | NE76000L vs FHX06X |
| NE32400N | RF Small Signal Field-Effect Transistor, 1-Element, X Band, Silicon, N-Channel, Hetero-junction FET, DIE-3 | NEC Electronics America Inc | NE76000L vs NE32400N |
| NE76100N | RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, DIE-5 | NEC Electronics America Inc | NE76000L vs NE76100N |