Part Details for NE24200 by California Eastern Laboratories (CEL)
Overview of NE24200 by California Eastern Laboratories (CEL)
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (4 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Education and Research
Automotive
Part Details for NE24200
NE24200 CAD Models
NE24200 Part Data Attributes:
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NE24200
California Eastern Laboratories (CEL)
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Datasheet
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NE24200
California Eastern Laboratories (CEL)
RF Small Signal Field-Effect Transistor, 1-Element, X Band, Silicon, N-Channel, Hetero-junction FET, DIE-6
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | CALIFORNIA EASTERN LABORATORIES | |
| Part Package Code | DIE | |
| Package Description | UNCASED CHIP, R-XUUC-N6 | |
| Pin Count | 6 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Additional Feature | HIGH RELIABILITY | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 4 V | |
| Drain Current-Max (ID) | 0.07 A | |
| FET Technology | HETERO-JUNCTION | |
| Highest Frequency Band | X BAND | |
| JESD-30 Code | R-XUUC-N6 | |
| Number of Elements | 1 | |
| Number of Terminals | 6 | |
| Operating Mode | DEPLETION MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | UNCASED CHIP | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Gain-Min (Gp) | 10 dB | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | NO LEAD | |
| Terminal Position | UPPER | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | SILICON |
Alternate Parts for NE24200
This table gives cross-reference parts and alternative options found for NE24200. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NE24200, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| NE24200 | RF Small Signal Field-Effect Transistor, KA Band, Silicon, N-Channel, Hetero-junction FET, DIE-6 | NEC Electronics Group | NE24200 vs NE24200 |
| NE32400 | RF Small Signal Field-Effect Transistor, 2-Element, X Band, Gallium Arsenide, N-Channel, Hetero-junction FET, DIE-3 | NEC Electronics America Inc | NE24200 vs NE32400 |
| NE32400 | RF Small Signal Field-Effect Transistor, 1-Element, X Band, Silicon, N-Channel, Hetero-junction FET, DIE-6 | California Eastern Laboratories (CEL) | NE24200 vs NE32400 |
| NE32400 | RF Small Signal Field-Effect Transistor, KA Band, Silicon, N-Channel, Hetero-junction FET, DIE-6 | NEC Electronics Group | NE24200 vs NE32400 |