There are no models available for this part yet.
Overview of NE32500 by NEC Compound Semiconductor Devices Ltd
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Energy and Power Systems
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Renewable Energy
Automotive
CAD Models for NE32500 by NEC Compound Semiconductor Devices Ltd
Part Data Attributes for NE32500 by NEC Compound Semiconductor Devices Ltd
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|
|
|---|---|
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Rohs Code
|
No
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|
Part Life Cycle Code
|
Obsolete
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Ihs Manufacturer
|
NEC COMPOUND SEMICONDUCTOR DEVICES LTD
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Package Description
|
DIE-4
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|
Reach Compliance Code
|
compliant
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ECCN Code
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EAR99
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Additional Feature
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LOW NOISE
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Configuration
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SINGLE
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DS Breakdown Voltage-Min
|
4 V
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FET Technology
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HETERO-JUNCTION
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Highest Frequency Band
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KA BAND
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JESD-30 Code
|
S-XUUC-N4
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JESD-609 Code
|
e0
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Number of Elements
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1
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Number of Terminals
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4
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Operating Mode
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DEPLETION MODE
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Package Body Material
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UNSPECIFIED
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Package Shape
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SQUARE
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Package Style
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UNCASED CHIP
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Polarity/Channel Type
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N-CHANNEL
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Power Gain-Min (Gp)
|
11 dB
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Qualification Status
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Not Qualified
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Surface Mount
|
YES
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Terminal Finish
|
TIN LEAD
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|
Terminal Form
|
NO LEAD
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Terminal Position
|
UPPER
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|
Transistor Application
|
AMPLIFIER
|
|
Transistor Element Material
|
GALLIUM ARSENIDE
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Alternate Parts for NE32500
This table gives cross-reference parts and alternative options found for NE32500. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NE32500, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| NE32500N | RF Small Signal Field-Effect Transistor, 1-Element, KA Band, Gallium Arsenide, N-Channel, Hetero-junction FET, DIE-4 | NEC Compound Semiconductor Devices Ltd | NE32500 vs NE32500N |
| NE76100N | RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, DIE-5 | NEC Electronics America Inc | NE32500 vs NE76100N |
| NE38018T2-A | RF Small Signal Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Hetero-junction FET | NEC Electronics Group | NE32500 vs NE38018T2-A |
| NE33200 | RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Hetero-junction FET | NEC Electronics Group | NE32500 vs NE33200 |
| FHX05X | RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE | FUJITSU Limited | NE32500 vs FHX05X |
| NE33200N | RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Hetero-junction FET | NEC Electronics Group | NE32500 vs NE33200N |
| NE38018 | RF Small Signal Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Hetero-junction FET | NEC Electronics Group | NE32500 vs NE38018 |
| NE32500M | RF Small Signal Field-Effect Transistor, 1-Element, KA Band, Gallium Arsenide, N-Channel, Hetero-junction FET, DIE-4 | NEC Compound Semiconductor Devices Ltd | NE32500 vs NE32500M |
| LP7512P70 | RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, High Electron Mobility FET | Filtronic plc | NE32500 vs LP7512P70 |
| FHX04X | RF Small Signal Field-Effect Transistor | FUJITSU Semiconductor Limited | NE32500 vs FHX04X |