Datasheets
NDS9956A by:

Power Field-Effect Transistor, 3.7A I(D), 30V, 0.08ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8

Part Details for NDS9956A by Fairchild Semiconductor Corporation

Overview of NDS9956A by Fairchild Semiconductor Corporation

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for NDS9956A

Part # Distributor Description Stock Price Buy
Bristol Electronics   5173
RFQ
Bristol Electronics   Min Qty: 9 3365
  • 9 $0.5625
  • 37 $0.3656
  • 138 $0.2109
  • 476 $0.1800
  • 1,029 $0.1575
  • 2,446 $0.1462
$0.1462 / $0.5625 Buy Now
Quest Components 3.7 A, 30 V, 0.08 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET 2692
  • 1 $0.7500
  • 161 $0.2250
  • 890 $0.1950
$0.1950 / $0.7500 Buy Now
Quest Components 3.7 A, 30 V, 0.08 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET 1770
  • 1 $1.5000
  • 268 $0.6000
  • 1,334 $0.5250
$0.5250 / $1.5000 Buy Now
Chip 1 Exchange INSTOCK 7323
RFQ

Part Details for NDS9956A

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NDS9956A Part Data Attributes

NDS9956A Fairchild Semiconductor Corporation
Buy Now Datasheet
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NDS9956A Fairchild Semiconductor Corporation Power Field-Effect Transistor, 3.7A I(D), 30V, 0.08ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code SOIC
Package Description SOIC-8
Pin Count 8
Manufacturer Package Code 8LD, SOIC,JEDEC MS-012, .150" NARROW BODY, DUAL DAP
Reach Compliance Code unknown
ECCN Code EAR99
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 3.7 A
Drain-source On Resistance-Max 0.08 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 2 W
Pulsed Drain Current-Max (IDM) 15 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for NDS9956A

This table gives cross-reference parts and alternative options found for NDS9956A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NDS9956A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
NDS9956AS62Z Power Field-Effect Transistor, 3.7A I(D), 30V, 0.08ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 Fairchild Semiconductor Corporation NDS9956A vs NDS9956AS62Z
NDS9956AX 3.7A, 30V, 0.08ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, SO-8 Texas Instruments NDS9956A vs NDS9956AX
NDS9956A 3.7A, 30V, 0.08ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, SOIC-8 Rochester Electronics LLC NDS9956A vs NDS9956A
NDS9956AL86Z Power Field-Effect Transistor, 3.7A I(D), 30V, 0.08ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 Fairchild Semiconductor Corporation NDS9956A vs NDS9956AL86Z
Part Number Description Manufacturer Compare
HP4936DYT Power Field-Effect Transistor, 5.8A I(D), 30V, 0.037ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Harris Semiconductor NDS9956A vs HP4936DYT
HAT2027R 7A, 20V, 0.053ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA, FP-8DA, SOP-8 Renesas Electronics Corporation NDS9956A vs HAT2027R
FDS6961AZD84Z Power Field-Effect Transistor, 3.5A I(D), 30V, 0.09ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Fairchild Semiconductor Corporation NDS9956A vs FDS6961AZD84Z
FDS6812A Dual N-Channel Logic Level PWM Optimized PowerTrench® MOSFET, 8LD, SOIC,JEDEC MS-012, .150" NARROW BODY, DUAL DAP, 2500/TAPE REEL Fairchild Semiconductor Corporation NDS9956A vs FDS6812A
IRF7403 Power Field-Effect Transistor, 6.7A I(D), 30V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, Infineon Technologies AG NDS9956A vs IRF7403
HUF76105DK8T Power Field-Effect Transistor, 5A I(D), 30V, 0.072ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA Harris Semiconductor NDS9956A vs HUF76105DK8T
FW206 Power Field-Effect Transistor, 5A I(D), 30V, 0.12ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 SANYO Electric Co Ltd NDS9956A vs FW206
F4H3PD Power Field-Effect Transistor, 3.5A I(D), 30V, 0.21ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET Shindengen Electronic Manufacturing Co Ltd NDS9956A vs F4H3PD
FW203 Power Field-Effect Transistor, 5A I(D), 30V, 0.078ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 SANYO Electric Co Ltd NDS9956A vs FW203
IRF7314 Power Field-Effect Transistor, 5.3A I(D), 20V, 0.058ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 International Rectifier NDS9956A vs IRF7314

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