Part Details for NDS9400 by National Semiconductor Corporation
Overview of NDS9400 by National Semiconductor Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (8 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for NDS9400
NDS9400 CAD Models
NDS9400 Part Data Attributes:
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NDS9400
National Semiconductor Corporation
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Datasheet
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NDS9400
National Semiconductor Corporation
Power Field-Effect Transistor, 2.5A I(D), 20V, 0.25ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | NATIONAL SEMICONDUCTOR CORP | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 2.5 A | |
| Drain-source On Resistance-Max | 0.25 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G8 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 2 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Element Material | SILICON |
Alternate Parts for NDS9400
This table gives cross-reference parts and alternative options found for NDS9400. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NDS9400, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF7204PBF | Power Field-Effect Transistor, 5.3A I(D), 20V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 | Infineon Technologies AG | NDS9400 vs IRF7204PBF |
| IRF7202TR | Power Field-Effect Transistor, 2.5A I(D), 20V, 0.25ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | International Rectifier | NDS9400 vs IRF7202TR |
| IRF7204TR | Power Field-Effect Transistor, 5.3A I(D), 20V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, | Infineon Technologies AG | NDS9400 vs IRF7204TR |
| MMSF3P02HDR2 | Power MOSFET -20V -5.6A 75 mOhm Single P-Channel SO-8, SOIC-8 Narrow Body, 2500-REEL | onsemi | NDS9400 vs MMSF3P02HDR2 |
| IRF7204TR | Power Field-Effect Transistor, 5.3A I(D), 20V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | International Rectifier | NDS9400 vs IRF7204TR |
| NDS9400 | 2.5A, 20V, 0.25ohm, P-CHANNEL, Si, POWER, MOSFET | Texas Instruments | NDS9400 vs NDS9400 |
| IRF7204 | Power Field-Effect Transistor, 5.3A I(D), 20V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, | Infineon Technologies AG | NDS9400 vs IRF7204 |
| IRF7202 | Power Field-Effect Transistor, 2.5A I(D), 20V, 0.25ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | International Rectifier | NDS9400 vs IRF7202 |