NDS9400
vs
IRF7204
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
NATIONAL SEMICONDUCTOR CORP
INFINEON TECHNOLOGIES AG
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
Configuration
SINGLE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
20 V
20 V
Drain Current-Max (ID)
2.5 A
5.3 A
Drain-source On Resistance-Max
0.25 Ω
0.06 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PDSO-G8
R-PDSO-G8
Number of Elements
1
1
Number of Terminals
8
8
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity/Channel Type
P-CHANNEL
P-CHANNEL
Power Dissipation-Max (Abs)
2 W
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Form
GULL WING
GULL WING
Terminal Position
DUAL
DUAL
Transistor Element Material
SILICON
SILICON
Base Number Matches
2
4
Rohs Code
No
HTS Code
8541.29.00.95
Samacsys Manufacturer
Infineon
Additional Feature
LOGIC LEVEL COMPATIBLE
JESD-609 Code
e0
Moisture Sensitivity Level
1
Operating Temperature-Max
150 °C
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Power Dissipation Ambient-Max
2.5 W
Terminal Finish
Tin/Lead (Sn/Pb)
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
SWITCHING
Compare NDS9400 with alternatives
Compare IRF7204 with alternatives