Part Details for MTP33N10E by onsemi
Overview of MTP33N10E by onsemi
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (5 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (8 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Automotive
Price & Stock for MTP33N10E
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 4 |
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RFQ | ||
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Bristol Electronics | Min Qty: 1 | 50 |
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$5.1562 / $8.2500 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-220AB | 3 |
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$7.4580 / $10.1700 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-220AB | 40 |
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$7.4250 / $11.0000 | Buy Now |
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NexGen Digital | 9 |
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RFQ |
Part Details for MTP33N10E
MTP33N10E CAD Models
MTP33N10E Part Data Attributes
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MTP33N10E
onsemi
Buy Now
Datasheet
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Compare Parts:
MTP33N10E
onsemi
33A, 100V, 0.06ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, CASE 221A-09, 3 PIN
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | ON SEMICONDUCTOR | |
Part Package Code | TO-220AB | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Pin Count | 3 | |
Manufacturer Package Code | CASE 221A-09 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | onsemi | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 545 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 33 A | |
Drain-source On Resistance-Max | 0.06 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | 235 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 125 W | |
Pulsed Drain Current-Max (IDM) | 99 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | TIN LEAD | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for MTP33N10E
This table gives cross-reference parts and alternative options found for MTP33N10E. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MTP33N10E, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
BUK456-100A-T | TRANSISTOR 34 A, 100 V, 0.057 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power | NXP Semiconductors | MTP33N10E vs BUK456-100A-T |
MTP33N10E | 33A, 100V, 0.058ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN | Texas Instruments | MTP33N10E vs MTP33N10E |
BUK456-100B | TRANSISTOR 32 A, 100 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, TO-220AB, 3 PIN, FET General Purpose Power | NXP Semiconductors | MTP33N10E vs BUK456-100B |
MTP25N10E | 25A, 100V, 0.075ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Motorola Mobility LLC | MTP33N10E vs MTP25N10E |
BUK456-100A | TRANSISTOR 34 A, 100 V, 0.057 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, TO-220AB, 3 PIN, FET General Purpose Power | NXP Semiconductors | MTP33N10E vs BUK456-100A |