Datasheets
MTP10N40E by:

10A, 400V, 0.55ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

Part Details for MTP10N40E by Motorola Mobility LLC

Overview of MTP10N40E by Motorola Mobility LLC

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Applications Consumer Electronics Education and Research Energy and Power Systems

Part Details for MTP10N40E

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MTP10N40E Part Data Attributes

MTP10N40E Motorola Mobility LLC
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MTP10N40E Motorola Mobility LLC 10A, 400V, 0.55ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Part Life Cycle Code Transferred
Ihs Manufacturer MOTOROLA INC
Package Description FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code unknown
ECCN Code EAR99
Avalanche Energy Rating (Eas) 520 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 400 V
Drain Current-Max (ID) 10 A
Drain-source On Resistance-Max 0.55 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 125 W
Pulsed Drain Current-Max (IDM) 40 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for MTP10N40E

This table gives cross-reference parts and alternative options found for MTP10N40E. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MTP10N40E, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF741 Power Field-Effect Transistor, 10A I(D), 350V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier MTP10N40E vs IRF741
BUZ61A Power Field-Effect Transistor, 11A I(D), 400V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Siemens MTP10N40E vs BUZ61A
RFP7N35 7A, 350V, 0.75ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA Rochester Electronics LLC MTP10N40E vs RFP7N35
IRF740PBF Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 International Rectifier MTP10N40E vs IRF740PBF
IRF740 10A, 400V, 0.55ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Rochester Electronics LLC MTP10N40E vs IRF740
IRF740PBF Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN Vishay Siliconix MTP10N40E vs IRF740PBF
IRF740LC Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier MTP10N40E vs IRF740LC
IRF740-010 Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier MTP10N40E vs IRF740-010
IRF740-009 Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier MTP10N40E vs IRF740-009
IRF743 8A, 350V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Rochester Electronics LLC MTP10N40E vs IRF743
Part Number Description Manufacturer Compare
IRF741-001 Power Field-Effect Transistor, 10A I(D), 350V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET International Rectifier MTP10N40E vs IRF741-001
IRF743 8A, 350V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Rochester Electronics LLC MTP10N40E vs IRF743
IRF741 Power Field-Effect Transistor, 10A I(D), 350V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN TT Electronics Resistors MTP10N40E vs IRF741
IRF743 Power Field-Effect Transistor, 8A I(D), 350V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Harris Semiconductor MTP10N40E vs IRF743
IRF742 Power Field-Effect Transistor, 8A I(D), 400V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Harris Semiconductor MTP10N40E vs IRF742
IRF741 10A, 350V, 0.55ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Motorola Mobility LLC MTP10N40E vs IRF741
IRF743 Power Field-Effect Transistor, 8.3A I(D), 350V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Samsung Semiconductor MTP10N40E vs IRF743
IRF743 8.3A, 350V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN TT Electronics Power and Hybrid / Semelab Limited MTP10N40E vs IRF743
IRF740PBF Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN Vishay Siliconix MTP10N40E vs IRF740PBF
IRF740-009 Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier MTP10N40E vs IRF740-009

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