Datasheets
RFP7N35 by:

7A, 350V, 0.75ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA

Part Details for RFP7N35 by Rochester Electronics LLC

Overview of RFP7N35 by Rochester Electronics LLC

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Part Details for RFP7N35

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RFP7N35 Part Data Attributes:

RFP7N35 Rochester Electronics LLC
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RFP7N35 Rochester Electronics LLC 7A, 350V, 0.75ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
Pbfree Code No
Rohs Code No
Part Life Cycle Code Active
Ihs Manufacturer ROCHESTER ELECTRONICS LLC
Reach Compliance Code unknown
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 350 V
Drain Current-Max (ID) 7 A
Drain-source On Resistance-Max 0.75 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-204AA
JESD-30 Code O-MBFM-P2
JESD-609 Code e0
Moisture Sensitivity Level NOT SPECIFIED
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Package Body Material METAL
Package Shape ROUND
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 15 A
Qualification Status COMMERCIAL
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form PIN/PEG
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for RFP7N35

This table gives cross-reference parts and alternative options found for RFP7N35. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RFP7N35, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF740-010 Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier RFP7N35 vs IRF740-010
IRF740 Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Samsung Semiconductor RFP7N35 vs IRF740
IRF741 Power Field-Effect Transistor, 10A I(D), 350V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier RFP7N35 vs IRF741
IRF741 10A, 350V, 0.55ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Rochester Electronics LLC RFP7N35 vs IRF741
IRF740LCPBF Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN Vishay Siliconix RFP7N35 vs IRF740LCPBF
IRF740PBF Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN Vishay Siliconix RFP7N35 vs IRF740PBF
IRF740-006 Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier RFP7N35 vs IRF740-006
IRF742 8A, 400V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Rochester Electronics LLC RFP7N35 vs IRF742
MTP10N40E 10A, 400V, 0.55ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Motorola Mobility LLC RFP7N35 vs MTP10N40E
IRF740 10A, 400V, 0.55ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Rochester Electronics LLC RFP7N35 vs IRF740
Part Number Description Manufacturer Compare
IRF742 Power Field-Effect Transistor, 8A I(D), 400V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Harris Semiconductor RFP7N35 vs IRF742
IRF743 8.3A, 350V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN TT Electronics Power and Hybrid / Semelab Limited RFP7N35 vs IRF743
IRF743 Power Field-Effect Transistor, 8.3A I(D), 350V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN TT Electronics Resistors RFP7N35 vs IRF743
IRF741 Power Field-Effect Transistor, 10A I(D), 350V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Harris Semiconductor RFP7N35 vs IRF741
MTP10N25 Power Field-Effect Transistor, 10A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Motorola Semiconductor Products RFP7N35 vs MTP10N25
IRF742 Power Field-Effect Transistor, 8.3A I(D), 400V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Samsung Semiconductor RFP7N35 vs IRF742
BUZ61A Power Field-Effect Transistor, 11A I(D), 400V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Infineon Technologies AG RFP7N35 vs BUZ61A
MTP10N40E 10A, 400V, 0.55ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB onsemi RFP7N35 vs MTP10N40E
IRF740-006 Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier RFP7N35 vs IRF740-006
MTP10N35 10A, 350V, 0.55ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Motorola Mobility LLC RFP7N35 vs MTP10N35

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