Datasheets
MTB55N10EL by:

Power Field-Effect Transistor, 55A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Details for MTB55N10EL by Motorola Semiconductor Products

Overview of MTB55N10EL by Motorola Semiconductor Products

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Part Details for MTB55N10EL

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MTB55N10EL Part Data Attributes

MTB55N10EL Motorola Semiconductor Products
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MTB55N10EL Motorola Semiconductor Products Power Field-Effect Transistor, 55A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer MOTOROLA INC
Package Description SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature LOGIC LEVEL COMPATIBLE
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 55 A
Drain-source On Resistance-Max 0.03 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2
JESD-609 Code e0
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 203 W
Pulsed Drain Current-Max (IDM) 193 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN LEAD
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for MTB55N10EL

This table gives cross-reference parts and alternative options found for MTB55N10EL. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MTB55N10EL, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
MTB55N10ELT4 Power Field-Effect Transistor, 55A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Motorola Semiconductor Products MTB55N10EL vs MTB55N10ELT4
Part Number Description Manufacturer Compare
STB40NF10-1 50A, 100V, 0.028ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, TO-262, I2PAK-3 STMicroelectronics MTB55N10EL vs STB40NF10-1
IRL2910STRRPBF Power Field-Effect Transistor, 55A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 Infineon Technologies AG MTB55N10EL vs IRL2910STRRPBF
IRL2910STRLHR Power Field-Effect Transistor, 55A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3 International Rectifier MTB55N10EL vs IRL2910STRLHR
IRL2910SPBF Power Field-Effect Transistor, 55A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier MTB55N10EL vs IRL2910SPBF
IRL2910SHR Power Field-Effect Transistor, 55A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3 International Rectifier MTB55N10EL vs IRL2910SHR
IRL2910 Power Field-Effect Transistor, 55A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN Infineon Technologies AG MTB55N10EL vs IRL2910
IRL2910STRL Power Field-Effect Transistor, 55A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 International Rectifier MTB55N10EL vs IRL2910STRL
IRL2910STRLPBF Power Field-Effect Transistor, 55A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 Infineon Technologies AG MTB55N10EL vs IRL2910STRLPBF
2SK3358-Z Power Field-Effect Transistor, 55A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220SMD, 3 PIN NEC Electronics Group MTB55N10EL vs 2SK3358-Z
DMNH10H028SK3Q-13 Power Field-Effect Transistor, 55A I(D), 100V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3/2 Diodes Incorporated MTB55N10EL vs DMNH10H028SK3Q-13

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