Part Details for MT41K1G4RH-107:E by Micron Technology Inc
Overview of MT41K1G4RH-107:E by Micron Technology Inc
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Internet of Things (IoT)
Computing and Data Storage
Entertainment and Gaming
Price & Stock for MT41K1G4RH-107:E
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
MT41K1G4RH-107:E
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Avnet Americas | DRAM Chip DDR3L SDRAM 4G-Bit 1Gx4 1.35V 78-Pin F-BGA - Bulk (Alt: MT41K1G4RH-107:E) RoHS: Compliant Min Qty: 1260 Package Multiple: 1260 Container: Bulk | 0 |
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RFQ | |
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DISTI #
MT41K1G4RH-107:E
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Avnet Americas | DRAM Chip DDR3L SDRAM 4G-Bit 1Gx4 1.35V 78-Pin F-BGA - Bulk (Alt: MT41K1G4RH-107:E) RoHS: Compliant Min Qty: 1260 Package Multiple: 1260 Container: Bulk | 0 |
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RFQ |
Part Details for MT41K1G4RH-107:E
MT41K1G4RH-107:E CAD Models
MT41K1G4RH-107:E Part Data Attributes:
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MT41K1G4RH-107:E
Micron Technology Inc
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Datasheet
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Compare Parts:
MT41K1G4RH-107:E
Micron Technology Inc
DDR DRAM, 1GX4, CMOS, PBGA78, 9 X 10.50 MM, LEAD FREE, FBGA-78
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | MICRON TECHNOLOGY INC | |
| Package Description | TFBGA, BGA78,9X13,32 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.36 | |
| Access Mode | MULTI BANK PAGE BURST | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 933 MHz | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 8 | |
| JESD-30 Code | R-PBGA-B78 | |
| Length | 10.5 mm | |
| Memory Density | 4294967296 bit | |
| Memory IC Type | DDR3L DRAM | |
| Memory Width | 4 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 78 | |
| Number of Words | 1073741824 words | |
| Number of Words Code | 1000000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 95 °C | |
| Operating Temperature-Min | ||
| Organization | 1GX4 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TFBGA | |
| Package Equivalence Code | BGA78,9X13,32 | |
| Package Shape | RECTANGULAR | |
| Package Style | GRID ARRAY, THIN PROFILE, FINE PITCH | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 8192 | |
| Seated Height-Max | 1.2 mm | |
| Self Refresh | YES | |
| Sequential Burst Length | 8 | |
| Standby Current-Max | 0.016 A | |
| Supply Current-Max | 0.251 mA | |
| Supply Voltage-Max (Vsup) | 1.45 V | |
| Supply Voltage-Min (Vsup) | 1.283 V | |
| Supply Voltage-Nom (Vsup) | 1.35 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | OTHER | |
| Terminal Form | BALL | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | BOTTOM | |
| Width | 9 mm |
Alternate Parts for MT41K1G4RH-107:E
This table gives cross-reference parts and alternative options found for MT41K1G4RH-107:E. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MT41K1G4RH-107:E, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| H5TC4G43MFR-H9A | DDR DRAM, 1GX4, CMOS, PBGA78, HALOGEN FREE AND ROHS COMPLIANT, FBGA-78 | SK Hynix Inc | MT41K1G4RH-107:E vs H5TC4G43MFR-H9A |
| EDJ4204EASE-DJ-F | DDR DRAM, 1GX4, 0.255ns, CMOS, PBGA78, HALOGEN FREE AND ROHS COMPLIANT, FBGA-78 | Elpida Memory Inc | MT41K1G4RH-107:E vs EDJ4204EASE-DJ-F |
| EDJ4204EASE-AE-F | DDR DRAM, 1GX4, 0.3ns, CMOS, PBGA78, HALOGEN FREE AND ROHS COMPLIANT, FBGA-78 | Elpida Memory Inc | MT41K1G4RH-107:E vs EDJ4204EASE-AE-F |
| H5TQ4G43MFR-H9C | DDR DRAM, 1GX4, 0.255ns, CMOS, PBGA78, HALOGEN FREE AND ROHS COMPLIANT, FBGA-78 | SK Hynix Inc | MT41K1G4RH-107:E vs H5TQ4G43MFR-H9C |
| H5TC4G43MFR-PBA | DDR DRAM, 1GX4, CMOS, PBGA78, HALOGEN FREE AND ROHS COMPLIANT, FBGA-78 | SK Hynix Inc | MT41K1G4RH-107:E vs H5TC4G43MFR-PBA |
| H5TQ4G43MFR-G7C | DDR DRAM, 1GX4, 0.3ns, CMOS, PBGA78, HALOGEN FREE AND ROHS COMPLIANT, FBGA-78 | SK Hynix Inc | MT41K1G4RH-107:E vs H5TQ4G43MFR-G7C |
| MT41J1G4THD-25 | DDR DRAM, 64MX4, 2.5ns, CMOS, PBGA78, 9 X 11.5 MM, 1.2 MM HEIGHT, LEAD FREE, FBGA-78 | Micron Technology Inc | MT41K1G4RH-107:E vs MT41J1G4THD-25 |
| H5TQ4G43MFR-RDC | DDR DRAM, 1GX4, 0.195ns, CMOS, PBGA78, HALOGEN FREE AND ROHS COMPLIANT, FBGA-78 | SK Hynix Inc | MT41K1G4RH-107:E vs H5TQ4G43MFR-RDC |
| K4B4G0446A-HYK00 | DDR DRAM, 1GX4, 0.25ns, CMOS, PBGA78, HALOGEN FREE AND ROHS COMPLIANT, FBGA-78 | Samsung Semiconductor | MT41K1G4RH-107:E vs K4B4G0446A-HYK00 |
| MT41K1G4RA-15E:D | DDR DRAM, 1GX4, CMOS, PBGA78, 10.50 X 12 MM, LEAD FREE, FBGA-78 | Micron Technology Inc | MT41K1G4RH-107:E vs MT41K1G4RA-15E:D |