Part Details for MT36VDDF25672DY-40BXX by Micron Technology Inc
Overview of MT36VDDF25672DY-40BXX by Micron Technology Inc
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- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for MT36VDDF25672DY-40BXX
MT36VDDF25672DY-40BXX CAD Models
MT36VDDF25672DY-40BXX Part Data Attributes
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MT36VDDF25672DY-40BXX
Micron Technology Inc
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Datasheet
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MT36VDDF25672DY-40BXX
Micron Technology Inc
DDR DRAM Module, 256MX72, CMOS, LEAD FREE, RDIMM-184
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | MICRON TECHNOLOGY INC | |
| Part Package Code | DIMM | |
| Package Description | DIMM, | |
| Pin Count | 184 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.36 | |
| Access Mode | FOUR BANK PAGE BURST | |
| Additional Feature | AUTO/SELF REFRESH | |
| JESD-30 Code | R-XDMA-N184 | |
| JESD-609 Code | e4 | |
| Memory Density | 19327352832 bit | |
| Memory IC Type | DDR DRAM MODULE | |
| Memory Width | 72 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 184 | |
| Number of Words | 268435456 words | |
| Number of Words Code | 256000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 256MX72 | |
| Package Body Material | UNSPECIFIED | |
| Package Code | DIMM | |
| Package Shape | RECTANGULAR | |
| Package Style | MICROELECTRONIC ASSEMBLY | |
| Qualification Status | Not Qualified | |
| Self Refresh | YES | |
| Supply Voltage-Max (Vsup) | 2.7 V | |
| Supply Voltage-Min (Vsup) | 2.5 V | |
| Supply Voltage-Nom (Vsup) | 2.6 V | |
| Surface Mount | NO | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Finish | GOLD | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL |
Alternate Parts for MT36VDDF25672DY-40BXX
This table gives cross-reference parts and alternative options found for MT36VDDF25672DY-40BXX. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MT36VDDF25672DY-40BXX, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| MT36VDDS25672DY-262XX | DDR DRAM Module, 256MX72, 0.7ns, CMOS, MO-206, DIMM-184 | Micron Technology Inc | MT36VDDF25672DY-40BXX vs MT36VDDS25672DY-262XX |
| MH56D72KLN-10 | DDR DRAM Module, 256MX72, 0.8ns, CMOS, DIMM-184 | Mitsubishi Electric | MT36VDDF25672DY-40BXX vs MH56D72KLN-10 |
| W3EG72256S262AJD3S | DDR DRAM Module, 256MX72, 0.75ns, CMOS, DIMM-184 | Microsemi Corporation | MT36VDDF25672DY-40BXX vs W3EG72256S262AJD3S |
| M312L5720BG0-CB3 | DDR DRAM Module, 256MX72, 0.7ns, CMOS, DIMM-184 | Samsung Semiconductor | MT36VDDF25672DY-40BXX vs M312L5720BG0-CB3 |
| MT18VDDT25672AIY-262 | DDR DRAM Module, 256MX72, 0.75ns, CMOS, PDMA184 | Micron Technology Inc | MT36VDDF25672DY-40BXX vs MT18VDDT25672AIY-262 |
| M312L5720CZ3-CCC | DDR DRAM Module, 256MX72, 0.65ns, CMOS, ROHS COMPLIANT, DIMM-184 | Samsung Semiconductor | MT36VDDF25672DY-40BXX vs M312L5720CZ3-CCC |
| MH56D72KLN-75A | DDR DRAM Module, 256MX72, 0.75ns, CMOS, DIMM-184 | Mitsubishi Electric | MT36VDDF25672DY-40BXX vs MH56D72KLN-75A |
| W3EG72255S202AJD3 | DDR DRAM Module, 256MX72, 0.8ns, CMOS, DIMM-184 | Microsemi Corporation | MT36VDDF25672DY-40BXX vs W3EG72255S202AJD3 |
| M312L5620MTS-CA2 | DDR DRAM Module, 256MX72, 0.75ns, CMOS, DIMM-184 | Samsung Semiconductor | MT36VDDF25672DY-40BXX vs M312L5620MTS-CA2 |
| VR4CU567228FTH | DDR DRAM Module, 256MX72, 0.75ns, CMOS, ROHS COMPLIANT, DIMM-184 | Viking Technology | MT36VDDF25672DY-40BXX vs VR4CU567228FTH |