Part Details for MT16HTF12864HY-40E by Micron Technology Inc
Overview of MT16HTF12864HY-40E by Micron Technology Inc
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Computing and Data Storage
Part Details for MT16HTF12864HY-40E
MT16HTF12864HY-40E CAD Models
MT16HTF12864HY-40E Part Data Attributes
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MT16HTF12864HY-40E
Micron Technology Inc
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Datasheet
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MT16HTF12864HY-40E
Micron Technology Inc
DDR DRAM Module, 128MX64, 0.6ns, CMOS, PDMA200
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | MICRON TECHNOLOGY INC | |
| Package Description | DIMM, DIMM200,24 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.36 | |
| Access Time-Max | 0.6 ns | |
| Clock Frequency-Max (fCLK) | 200 MHz | |
| I/O Type | COMMON | |
| JESD-30 Code | R-PDMA-N200 | |
| JESD-609 Code | e3 | |
| Memory Density | 8589934592 bit | |
| Memory IC Type | DDR DRAM MODULE | |
| Memory Width | 64 | |
| Moisture Sensitivity Level | 1 | |
| Number of Terminals | 200 | |
| Number of Words | 134217728 words | |
| Number of Words Code | 128000000 | |
| Operating Temperature-Max | 65 °C | |
| Operating Temperature-Min | ||
| Organization | 128MX64 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | DIMM | |
| Package Equivalence Code | DIMM200,24 | |
| Package Shape | RECTANGULAR | |
| Package Style | MICROELECTRONIC ASSEMBLY | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 8192 | |
| Standby Current-Max | 0.08 A | |
| Supply Current-Max | 3.04 mA | |
| Supply Voltage-Nom (Vsup) | 1.8 V | |
| Surface Mount | NO | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | NO LEAD | |
| Terminal Pitch | 0.6 mm | |
| Terminal Position | DUAL |
Alternate Parts for MT16HTF12864HY-40E
This table gives cross-reference parts and alternative options found for MT16HTF12864HY-40E. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MT16HTF12864HY-40E, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| WV3HG264M64EEU403D4SG | DDR DRAM Module, 128MX64, 0.6ns, CMOS, ROHS COMPLIANT, SODIMM-200 | Microsemi Corporation | MT16HTF12864HY-40E vs WV3HG264M64EEU403D4SG |
| M470T2864DZ3-LCC | Synchronous DRAM Module, 128MX64, 0.6ns, CMOS, ROHS COMPLIANT, SODIMM-200 | Samsung Semiconductor | MT16HTF12864HY-40E vs M470T2864DZ3-LCC |
| HYMP112S64AP6-E3 | DDR DRAM Module, 128MX64, 0.6ns, CMOS, ROHS COMPLIANT, SODIMM-200 | SK Hynix Inc | MT16HTF12864HY-40E vs HYMP112S64AP6-E3 |
| M470T2953EZ3-LCC | DDR DRAM Module, 128MX64, 0.6ns, CMOS, ROHS COMPLIANT, SODIMM-200 | Samsung Semiconductor | MT16HTF12864HY-40E vs M470T2953EZ3-LCC |
| M470L2923BN0-CB0 | DDR DRAM Module, 128MX64, 0.75ns, CMOS, SODIMM-200 | Samsung Semiconductor | MT16HTF12864HY-40E vs M470L2923BN0-CB0 |
| HYS64D128021EBDL-5-B | DDR DRAM Module, 128MX64, 0.5ns, CMOS, PDMA200, ROHS COMPLIANT, SODIMM-200 | Qimonda AG | MT16HTF12864HY-40E vs HYS64D128021EBDL-5-B |
| WV3EG265M64EFSU265D4-S | DDR DRAM Module, 128MX64, 0.75ns, CMOS, SODIMM-200 | Microsemi Corporation | MT16HTF12864HY-40E vs WV3EG265M64EFSU265D4-S |
| W3HG128M64EEU403D4SG | DDR DRAM Module, 128MX64, 0.6ns, CMOS, ROHS COMPLIANT, SODIMM-200 | Microsemi Corporation | MT16HTF12864HY-40E vs W3HG128M64EEU403D4SG |
| M2N1G64TU8HA2B-5A | DDR DRAM Module, 128MX64, 0.6ns, CMOS, GREEN, SODIMM-200 | Nanya Technology Corporation | MT16HTF12864HY-40E vs M2N1G64TU8HA2B-5A |
| EBD11UD8ABDA-7A | DDR DRAM Module, 128MX64, 0.75ns, CMOS, SODIMM-200 | Elpida Memory Inc | MT16HTF12864HY-40E vs EBD11UD8ABDA-7A |