MT16HTF12864HY-40E vs W3HG128M64EEU403D4SG feature comparison

MT16HTF12864HY-40E Micron Technology Inc

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W3HG128M64EEU403D4SG Microsemi Corporation

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Pbfree Code Yes Yes
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer MICRON TECHNOLOGY INC MICROSEMI CORP
Package Description DIMM, DIMM200,24 DIMM,
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.36 8542.32.00.36
Access Time-Max 0.6 ns 0.6 ns
Clock Frequency-Max (fCLK) 200 MHz
I/O Type COMMON
JESD-30 Code R-PDMA-N200 R-XZMA-N200
JESD-609 Code e3 e4
Memory Density 8589934592 bit 8589934592 bit
Memory IC Type DDR DRAM MODULE DDR DRAM MODULE
Memory Width 64 64
Moisture Sensitivity Level 1
Number of Terminals 200 200
Number of Words 134217728 words 134217728 words
Number of Words Code 128000000 128000000
Operating Temperature-Max 65 °C 85 °C
Operating Temperature-Min
Organization 128MX64 128MX64
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY UNSPECIFIED
Package Code DIMM DIMM
Package Equivalence Code DIMM200,24
Package Shape RECTANGULAR RECTANGULAR
Package Style MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY
Qualification Status Not Qualified Not Qualified
Refresh Cycles 8192
Standby Current-Max 0.08 A
Supply Current-Max 3.04 mA
Supply Voltage-Nom (Vsup) 1.8 V 1.8 V
Surface Mount NO NO
Technology CMOS CMOS
Temperature Grade COMMERCIAL OTHER
Terminal Finish MATTE TIN GOLD
Terminal Form NO LEAD NO LEAD
Terminal Pitch 0.6 mm
Terminal Position DUAL ZIG-ZAG
Base Number Matches 5 1
Part Package Code SODIMM
Pin Count 200
Access Mode SINGLE BANK PAGE BURST
Additional Feature AUTO/SELF REFRESH
Number of Functions 1
Number of Ports 1
Operating Mode SYNCHRONOUS
Self Refresh YES
Supply Voltage-Max (Vsup) 1.9 V
Supply Voltage-Min (Vsup) 1.7 V

Compare MT16HTF12864HY-40E with alternatives

Compare W3HG128M64EEU403D4SG with alternatives