Datasheets
MS1003 by:

RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, 0.500 INCH, PLASTIC, M111, FM-6

Part Details for MS1003 by Advanced Power Technology

Overview of MS1003 by Advanced Power Technology

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Applications Industrial Automation Energy and Power Systems Renewable Energy

Part Details for MS1003

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MS1003 Part Data Attributes:

MS1003 Advanced Power Technology
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MS1003 Advanced Power Technology RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, 0.500 INCH, PLASTIC, M111, FM-6
Part Life Cycle Code Transferred
Ihs Manufacturer ADVANCED POWER TECHNOLOGY INC
Package Description 0.500 INCH, PLASTIC, M111, FM-6
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature WITH EMITTER BALLASTING RESISTORS
Collector Current-Max (IC) 20 A
Collector-Base Capacitance-Max 390 pF
Collector-Emitter Voltage-Max 18 V
Configuration SINGLE
DC Current Gain-Min (hFE) 10
Highest Frequency Band VERY HIGH FREQUENCY BAND
JESD-30 Code O-PXFM-F6
Number of Elements 1
Number of Terminals 6
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape ROUND
Package Style FLANGE MOUNT
Polarity/Channel Type NPN
Power Dissipation-Max (Abs) 270 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Form FLAT
Terminal Position UNSPECIFIED
Transistor Application AMPLIFIER
Transistor Element Material SILICON

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