Datasheets
MN4SV4160T-10 by: Panasonic Electronic Components

Synchronous DRAM, 256KX16, 8ns, PDSO50

Part Details for MN4SV4160T-10 by Panasonic Electronic Components

Overview of MN4SV4160T-10 by Panasonic Electronic Components

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Part Details for MN4SV4160T-10

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MN4SV4160T-10 Part Data Attributes

MN4SV4160T-10 Panasonic Electronic Components
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MN4SV4160T-10 Panasonic Electronic Components Synchronous DRAM, 256KX16, 8ns, PDSO50
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer PANASONIC CORP
Package Description TSOP, TSOP50,.46,32
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8542.32.00.02
Access Time-Max 8 ns
Clock Frequency-Max (fCLK) 100 MHz
I/O Type COMMON
Interleaved Burst Length 1,2,4,8
JESD-30 Code R-PDSO-G50
JESD-609 Code e0
Memory Density 4194304 bit
Memory IC Type SYNCHRONOUS DRAM
Memory Width 16
Number of Terminals 50
Number of Words 262144 words
Number of Words Code 256000
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 256KX16
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code TSOP
Package Equivalence Code TSOP50,.46,32
Package Shape RECTANGULAR
Package Style SMALL OUTLINE, THIN PROFILE
Qualification Status Not Qualified
Refresh Cycles 1024
Sequential Burst Length 1,2,4,8,FP
Standby Current-Max 0.001 A
Supply Current-Max 0.11 mA
Supply Voltage-Nom (Vsup) 3.3 V
Surface Mount YES
Temperature Grade COMMERCIAL
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form GULL WING
Terminal Pitch 0.8 mm
Terminal Position DUAL

Alternate Parts for MN4SV4160T-10

This table gives cross-reference parts and alternative options found for MN4SV4160T-10. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MN4SV4160T-10, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
MB81141623-010PFTN 256KX16 SYNCHRONOUS DRAM, 58ns, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 FUJITSU Limited MN4SV4160T-10 vs MB81141623-010PFTN
HY57V41610TC-12 Synchronous DRAM, 256KX16, 9ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, TSOP2-50 SK Hynix Inc MN4SV4160T-10 vs HY57V41610TC-12
IS42S16128-10T Synchronous DRAM, 256KX16, 10ns, CMOS, PDSO50, 0.400 INCH, TSOP2-50 Integrated Silicon Solution Inc MN4SV4160T-10 vs IS42S16128-10T
MSM54V24616-8TS-K Synchronous DRAM, 256KX16, 7ns, CMOS, PDSO50, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-50 OKI Electric Industry Co Ltd MN4SV4160T-10 vs MSM54V24616-8TS-K
M5M4V4S40CTP-12 Synchronous DRAM, 256KX16, 12ns, CMOS, PDSO50, 0.400 INCH, 0.80 MM PITCH, TSOP2-50 Mitsubishi Electric MN4SV4160T-10 vs M5M4V4S40CTP-12
MB81141620-010PFTN 256KX16 SYNCHRONOUS DRAM, 58ns, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 FUJITSU Limited MN4SV4160T-10 vs MB81141620-010PFTN
MSM54V24616-10TS-K Synchronous DRAM, 256KX16, 9ns, CMOS, PDSO50, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-50 LAPIS Semiconductor Co Ltd MN4SV4160T-10 vs MSM54V24616-10TS-K
HM5241605TT-12 Synchronous DRAM, 256KX16, 11ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Hitachi Ltd MN4SV4160T-10 vs HM5241605TT-12
MB81141623-010PFTN Synchronous DRAM, 256KX16, 58ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 FUJITSU Semiconductor Limited MN4SV4160T-10 vs MB81141623-010PFTN
UPD4504161G5-A10-7JF Synchronous DRAM, 256KX16, 8ns, MOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 NEC Electronics Group MN4SV4160T-10 vs UPD4504161G5-A10-7JF

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