Part Details for MSM54V24616-10TS-K by LAPIS Semiconductor Co Ltd
Overview of MSM54V24616-10TS-K by LAPIS Semiconductor Co Ltd
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Computing and Data Storage
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| DS25BR110TSDX/NOPB | Texas Instruments | 3.125 Gbps LVDS Buffer with Receive Equalization 8-WSON -40 to 85 | |
| DS25BR110TSD/NOPB | Texas Instruments | 3.125 Gbps LVDS Buffer with Receive Equalization 8-WSON -40 to 85 |
Part Details for MSM54V24616-10TS-K
MSM54V24616-10TS-K CAD Models
MSM54V24616-10TS-K Part Data Attributes
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MSM54V24616-10TS-K
LAPIS Semiconductor Co Ltd
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Datasheet
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MSM54V24616-10TS-K
LAPIS Semiconductor Co Ltd
Synchronous DRAM, 256KX16, 9ns, CMOS, PDSO50, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-50
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | LAPIS SEMICONDUCTOR CO LTD | |
| Part Package Code | TSOP2 | |
| Package Description | TSOP2, TSOP50,.46,32 | |
| Pin Count | 50 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.02 | |
| Access Mode | DUAL BANK PAGE BURST | |
| Access Time-Max | 9 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 100 MHz | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 1,2,4,8 | |
| JESD-30 Code | R-PDSO-G50 | |
| Length | 20.95 mm | |
| Memory Density | 4194304 bit | |
| Memory IC Type | SYNCHRONOUS DRAM | |
| Memory Width | 16 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 50 | |
| Number of Words | 262144 words | |
| Number of Words Code | 256000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 256KX16 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TSOP2 | |
| Package Equivalence Code | TSOP50,.46,32 | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE, THIN PROFILE | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 1024 | |
| Seated Height-Max | 1.2 mm | |
| Self Refresh | YES | |
| Sequential Burst Length | 1,2,4,8,FP | |
| Standby Current-Max | 0.002 A | |
| Supply Current-Max | 0.15 mA | |
| Supply Voltage-Max (Vsup) | 3.63 V | |
| Supply Voltage-Min (Vsup) | 2.97 V | |
| Supply Voltage-Nom (Vsup) | 3.3 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Form | GULL WING | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | DUAL | |
| Width | 10.16 mm |
Alternate Parts for MSM54V24616-10TS-K
This table gives cross-reference parts and alternative options found for MSM54V24616-10TS-K. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MSM54V24616-10TS-K, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| HY57V41610TC-12 | SK Hynix Inc | Check for Price | Synchronous DRAM, 256KX16, 9ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, TSOP2-50 | MSM54V24616-10TS-K vs HY57V41610TC-12 |
| MB81141623-010PFTN | FUJITSU Limited | Check for Price | 256KX16 SYNCHRONOUS DRAM, 58ns, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | MSM54V24616-10TS-K vs MB81141623-010PFTN |
| MB81141623-010PFTN | FUJITSU Semiconductor Limited | Check for Price | Synchronous DRAM, 256KX16, 58ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | MSM54V24616-10TS-K vs MB81141623-010PFTN |
| MB81141622-012PFTN | FUJITSU Limited | Check for Price | 256KX16 SYNCHRONOUS DRAM, 67ns, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | MSM54V24616-10TS-K vs MB81141622-012PFTN |
| IS42S16128-11T | Integrated Silicon Solution Inc | Check for Price | Synchronous DRAM, 256KX16, 10ns, CMOS, PDSO50, 0.400 INCH, TSOP2-50 | MSM54V24616-10TS-K vs IS42S16128-11T |
| HM5241605TT-20 | Hitachi Ltd | Check for Price | Synchronous DRAM, 256KX16, 18ns, MOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | MSM54V24616-10TS-K vs HM5241605TT-20 |
| M5M4V4S40DTP-15 | Mitsubishi Electric | Check for Price | DRAM, 256KX16, 15ns, CMOS, PDSO50, 0.400 INCH, TSOP2-50 | MSM54V24616-10TS-K vs M5M4V4S40DTP-15 |
| MB81141622-012PFTN | FUJITSU Semiconductor Limited | Check for Price | Synchronous DRAM, 256KX16, 67ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | MSM54V24616-10TS-K vs MB81141622-012PFTN |
| MSM54V24616-12TS-K | OKI Electric Industry Co Ltd | Check for Price | Synchronous DRAM, 256KX16, 10ns, CMOS, PDSO50, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-50 | MSM54V24616-10TS-K vs MSM54V24616-12TS-K |
| MB81141623-010PFTR | FUJITSU Semiconductor Limited | Check for Price | Synchronous DRAM, 256KX16, 58ns, CMOS, PDSO50, 0.400 INCH, REVERSE, PLASTIC, TSOP2-50 | MSM54V24616-10TS-K vs MB81141623-010PFTR |