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Transistors Power Field-Effect Transistors MMSF3P02HDR2

Transistors
MMSF3P02HDR2
Description: 5.6A, 20V, 0.075ohm, P-CHANNEL, Si, POWER, MOSFET, CASE 751-07, SO-8

Overview of MMSF3P02HDR2 by Rochester Electronics LLC

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Part Data Attributes for MMSF3P02HDR2 by Rochester Electronics LLC
Parametric Data

MMSF3P02HDR2
Rochester Electronics LLC
Buy Now
-
-
Pbfree Code
No
Rohs Code
No
Part Life Cycle Code
Active
Ihs Manufacturer
ROCHESTER ELECTRONICS LLC
Part Package Code
SOT
Package Description
CASE 751-07, SO-8
Pin Count
8
Manufacturer Package Code
CASE 751-07
Reach Compliance Code
unknown
Additional Feature
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas)
567 mJ
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
20 V
Drain Current-Max (ID)
5.6 A
Drain-source On Resistance-Max
0.075 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PDSO-G8
JESD-609 Code
e0
Moisture Sensitivity Level
NOT SPECIFIED
Number of Elements
1
Number of Terminals
8
Operating Mode
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
240
Polarity/Channel Type
P-CHANNEL
Pulsed Drain Current-Max (IDM)
30 A
Qualification Status
COMMERCIAL
Surface Mount
YES
Terminal Finish
TIN LEAD
Terminal Form
GULL WING
Terminal Position
DUAL
Time@Peak Reflow Temperature-Max (s)
30
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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  1. MMSF3P02HDR2
    Rochester Electronics LLC
    5.6A, 20V, 0.075ohm, P-CHANNEL, Si, POWER, MOSFET, CASE 751-07, SO-8
    VS

Alternate Parts for MMSF3P02HDR2

This table gives cross-reference parts and alternative options found for MMSF3P02HDR2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MMSF3P02HDR2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
MMSF3P02HD Power Field-Effect Transistor, 5.6A I(D), 20V, 0.095ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, CASE 751-05, SOIC-8 Motorola Semiconductor Products MMSF3P02HDR2 vs MMSF3P02HD
MMSF3P02HDR2G Power MOSFET -20V -5.6A 75 mOhm Single P-Channel SO-8, SOIC-8 Narrow Body, 2500-REEL onsemi MMSF3P02HDR2 vs MMSF3P02HDR2G
MMSF3P02HDR2 Power MOSFET -20V -5.6A 75 mOhm Single P-Channel SO-8, SOIC-8 Narrow Body, 2500-REEL onsemi MMSF3P02HDR2 vs MMSF3P02HDR2
Part Number Description Manufacturer Compare
IRF7204TRPBF Power Field-Effect Transistor, 5.3A I(D), 20V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, International Rectifier MMSF3P02HDR2 vs IRF7204TRPBF
IRF7204PBF Power Field-Effect Transistor, 5.3A I(D), 20V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 International Rectifier MMSF3P02HDR2 vs IRF7204PBF

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