IRF7204TRPBF
Description: Power Field-Effect Transistor, 5.3A I(D), 20V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,

Overview of IRF7204TRPBF by International Rectifier

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Price & Stock for IRF7204TRPBF by International Rectifier

Part # Manufacturer Description Stock Price Buy
Bristol Electronics   3308
RFQ
Quest Components TRANSISTOR,MOSFET,P-CHANNEL,20V V(BR)DSS,5.3A I(D),SO, TandR, LEAD FREE 1724
  • 1 $1.1410
  • 89 $0.5705
  • 352 $0.4564
$0.4564 / $1.1410 Buy Now
Quest Components TRANSISTOR,MOSFET,P-CHANNEL,20V V(BR)DSS,5.3A I(D),SO, TandR, LEAD FREE 95
  • 1 $1.1410
  • 23 $0.6846
  • 89 $0.5705
$0.5705 / $1.1410 Buy Now

CAD Models for IRF7204TRPBF by International Rectifier
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Part Data Attributes for IRF7204TRPBF by International Rectifier

IRF7204TRPBF
International Rectifier
-
-
Pbfree Code
Yes
Rohs Code
Yes
Part Life Cycle Code
Transferred
Ihs Manufacturer
INTERNATIONAL RECTIFIER CORP
Reach Compliance Code
compliant
ECCN Code
EAR99
HTS Code
8541.29.00.95
Additional Feature
LOGIC LEVEL COMPATIBLE
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
20 V
Drain Current-Max (ID)
5.3 A
Drain-source On Resistance-Max
0.06 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PDSO-G8
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
1
Number of Terminals
8
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Operating Temperature-Min
-55 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Polarity/Channel Type
P-CHANNEL
Power Dissipation Ambient-Max
2.5 W
Power Dissipation-Max (Abs)
2.5 W
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Finish
MATTE TIN
Terminal Form
GULL WING
Terminal Position
DUAL
Time@Peak Reflow Temperature-Max (s)
30
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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  1. IRF7204TRPBF
    International Rectifier
    Power Field-Effect Transistor, 5.3A I(D), 20V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,
    VS

Alternate Parts for IRF7204TRPBF

This table gives cross-reference parts and alternative options found for IRF7204TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF7204TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IRF7204TR Power Field-Effect Transistor, 5.3A I(D), 20V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET International Rectifier IRF7204TRPBF vs IRF7204TR
IRF7204PBF Power Field-Effect Transistor, 5.3A I(D), 20V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 Infineon Technologies AG IRF7204TRPBF vs IRF7204PBF
IRF7204PBF Power Field-Effect Transistor, 5.3A I(D), 20V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 International Rectifier IRF7204TRPBF vs IRF7204PBF
IRF7204 Power Field-Effect Transistor, 5.3A I(D), 20V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, Infineon Technologies AG IRF7204TRPBF vs IRF7204
Part Number Description Manufacturer Compare
MMSF3P02HDR2 5.6A, 20V, 0.075ohm, P-CHANNEL, Si, POWER, MOSFET, CASE 751-07, SO-8 Rochester Electronics LLC IRF7204TRPBF vs MMSF3P02HDR2
IRF7204PBF Power Field-Effect Transistor, 5.3A I(D), 20V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 International Rectifier IRF7204TRPBF vs IRF7204PBF

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