Part Details for MMDF3N02HD by Motorola Mobility LLC
Overview of MMDF3N02HD by Motorola Mobility LLC
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (3 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Space Technology
Audio and Video Systems
Renewable Energy
Electronic Manufacturing
Automotive
Part Details for MMDF3N02HD
MMDF3N02HD CAD Models
MMDF3N02HD Part Data Attributes:
|
|
MMDF3N02HD
Motorola Mobility LLC
Buy Now
Datasheet
|
Compare Parts:
MMDF3N02HD
Motorola Mobility LLC
3.8A, 20V, 0.09ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 751-05, SOIC-8
|
| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | MOTOROLA INC | |
| Part Package Code | SOT | |
| Package Description | SMALL OUTLINE, R-PDSO-G8 | |
| Pin Count | 8 | |
| Manufacturer Package Code | CASE 751-05 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 405 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 3.8 A | |
| Drain-source On Resistance-Max | 0.09 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 1.5 W | |
| Pulsed Drain Current-Max (IDM) | 19 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for MMDF3N02HD
This table gives cross-reference parts and alternative options found for MMDF3N02HD. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MMDF3N02HD, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| MMDF3N02HD | Power Field-Effect Transistor, 3.8A I(D), 20V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, CASE 751-05, SOIC-8 | Motorola Semiconductor Products | MMDF3N02HD vs MMDF3N02HD |
| MMDF3N02HDR2G | Power MOSFET 20V 3A 90 mOhm Dual N-Channel SO-8, SOIC-8 Narrow Body, 2500-REEL | onsemi | MMDF3N02HD vs MMDF3N02HDR2G |
| MMDF3N02HDR2 | 3.8A, 20V, 0.09ohm, N-CHANNEL, Si, POWER, MOSFET, SO-8 | Motorola Mobility LLC | MMDF3N02HD vs MMDF3N02HDR2 |