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Transistors / Power Field-Effect Transistors / MMDF1N05ER2G
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MMDF1N05ER2G by: onsemi

Power MOSFET 50V 2A 300 mOhm Dual N-Channel SO-8, SOIC-8 Narrow Body, 2500-REEL

Part Details for MMDF1N05ER2G by onsemi

Overview of MMDF1N05ER2G by onsemi

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Applications Education and Research Internet of Things (IoT) Computing and Data Storage Aerospace and Defense Healthcare Telecommunications Automotive

Price & Stock for MMDF1N05ER2G

Part # Distributor Description Stock Price Buy
DISTI # 83K8580
Newark Dual N Channel Mosfet, 50V, Soic, Channel Type:N Channel, Drain Source Voltage Vds N Channel:50V, Drain Source Voltage Vds P Channel:-, Continuous Drain Current Id N Channel:2A, Continuous Drain Current Id P Channel:- Rohs Compliant: Yes |Onsemi MMDF1N05ER2G Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Cut Tape 0
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Part Details for MMDF1N05ER2G

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MMDF1N05ER2G Part Data Attributes:

Parametric Data
MMDF1N05ER2G onsemi
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MMDF1N05ER2G onsemi Power MOSFET 50V 2A 300 mOhm Dual N-Channel SO-8, SOIC-8 Narrow Body, 2500-REEL
Pbfree Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer ONSEMI
Part Package Code SOIC-8 Narrow Body
Package Description SO-8
Pin Count 8
Manufacturer Package Code 751-07
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Samacsys Manufacturer onsemi
Additional Feature LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas) 300 mJ
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 50 V
Drain Current-Max (ID) 2 A
Drain-source On Resistance-Max 0.3 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 2 W
Pulsed Drain Current-Max (IDM) 10 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for MMDF1N05ER2G

This table gives cross-reference parts and alternative options found for MMDF1N05ER2G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MMDF1N05ER2G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
MMDF1N05ER1 Power Field-Effect Transistor, 1A I(D), 50V, 0.2ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, CASE 751-05, SOIC-8 Motorola Semiconductor Products MMDF1N05ER2G vs MMDF1N05ER1
MMDF1N05ER2 2A, 50V, 0.5ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, SO-8 Motorola Mobility LLC MMDF1N05ER2G vs MMDF1N05ER2
MMDF1N05ER2 Power MOSFET 50V 2A 300 mOhm Dual N-Channel SO-8, SOIC-8 Narrow Body, 2500-REEL onsemi MMDF1N05ER2G vs MMDF1N05ER2
Part Number Description Manufacturer Compare
RF1K49154 Power Field-Effect Transistor, 2A I(D), 60V, 0.15ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, Harris Semiconductor MMDF1N05ER2G vs RF1K49154
IRF7103PBF Power Field-Effect Transistor, 3A I(D), 50V, 0.13ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 International Rectifier MMDF1N05ER2G vs IRF7103PBF
BSO615NGXT Power Field-Effect Transistor, 2.6A I(D), 60V, 0.15ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, SOP-8 Infineon Technologies AG MMDF1N05ER2G vs BSO615NGXT
RF1K4915496 2A, 60V, 0.13ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA Intersil Corporation MMDF1N05ER2G vs RF1K4915496
MMDF1N05ER1 Power Field-Effect Transistor, 1A I(D), 50V, 0.2ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, CASE 751-05, SOIC-8 Motorola Semiconductor Products MMDF1N05ER2G vs MMDF1N05ER1
NDS9945 Power Field-Effect Transistor, 3.5A I(D), 60V, 0.1ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 Fairchild Semiconductor Corporation MMDF1N05ER2G vs NDS9945
AUIRF7103Q Power Field-Effect Transistor, 3A I(D), 50V, 0.13ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, ROHS COMPLIANT, SOP-8 Infineon Technologies AG MMDF1N05ER2G vs AUIRF7103Q
MMDF1N05ER2 2A, 50V, 0.5ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, SO-8 Motorola Mobility LLC MMDF1N05ER2G vs MMDF1N05ER2
NDS9957L86Z Power Field-Effect Transistor, 2.6A I(D), 60V, 0.16ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 Fairchild Semiconductor Corporation MMDF1N05ER2G vs NDS9957L86Z
NDS9955L86Z Power Field-Effect Transistor, 3A I(D), 50V, 0.13ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Fairchild Semiconductor Corporation MMDF1N05ER2G vs NDS9955L86Z

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