Datasheets
RF1K49154 by:

Power Field-Effect Transistor, 2A I(D), 60V, 0.15ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA,

Part Details for RF1K49154 by Harris Semiconductor

Overview of RF1K49154 by Harris Semiconductor

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Part Details for RF1K49154

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RF1K49154 Part Data Attributes

RF1K49154 Harris Semiconductor
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RF1K49154 Harris Semiconductor Power Field-Effect Transistor, 2A I(D), 60V, 0.15ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA,
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer HARRIS SEMICONDUCTOR
Package Description SMALL OUTLINE, R-PDSO-G8
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature ESD PROTECTED, LOGIC LEVEL COMPATIBLE
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 2 A
Drain-source On Resistance-Max 0.15 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code MS-012AA
JESD-30 Code R-PDSO-G8
JESD-609 Code e0
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 2 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN LEAD
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 155 ns
Turn-on Time-Max (ton) 50 ns

Alternate Parts for RF1K49154

This table gives cross-reference parts and alternative options found for RF1K49154. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RF1K49154, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
RF1K4915496 Power Field-Effect Transistor, 2A I(D), 60V, 0.13ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, Fairchild Semiconductor Corporation RF1K49154 vs RF1K4915496
Part Number Description Manufacturer Compare
NDS9957L86Z Power Field-Effect Transistor, 2.6A I(D), 60V, 0.16ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 Fairchild Semiconductor Corporation RF1K49154 vs NDS9957L86Z
IRF7103PBF Power Field-Effect Transistor, 3A I(D), 50V, 0.13ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 International Rectifier RF1K49154 vs IRF7103PBF
RF1K4915496 2A, 60V, 0.13ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA Intersil Corporation RF1K49154 vs RF1K4915496
NDS9945X 3.5A, 60V, 0.1ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, SO-8 Texas Instruments RF1K49154 vs NDS9945X
NDS9955 Power Field-Effect Transistor, 3A I(D), 50V, 0.13ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Fairchild Semiconductor Corporation RF1K49154 vs NDS9955
NDS9957L99Z Power Field-Effect Transistor, 2.6A I(D), 60V, 0.16ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Fairchild Semiconductor Corporation RF1K49154 vs NDS9957L99Z
NDS9945 Dual N-Channel Enhancement Mode Field Effect Transistor 60V, 3.5A, 100mΩ, SOIC-8, 2500-REEL onsemi RF1K49154 vs NDS9945
RF1K4915496 Power Field-Effect Transistor, 2A I(D), 60V, 0.15ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, Harris Semiconductor RF1K49154 vs RF1K4915496
IRF7103 Power Field-Effect Transistor, 3A I(D), 50V, 0.13ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, International Rectifier RF1K49154 vs IRF7103
NDS9955D84Z Power Field-Effect Transistor, 3A I(D), 50V, 0.13ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Fairchild Semiconductor Corporation RF1K49154 vs NDS9955D84Z

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