Datasheets
MMBTH10-4LT1 by:

NPN Bipolar Transistor, SOT-23 (TO-236) 3 LEAD, 3000-REEL

Part Details for MMBTH10-4LT1 by onsemi

Overview of MMBTH10-4LT1 by onsemi

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Part Details for MMBTH10-4LT1

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MMBTH10-4LT1 Part Data Attributes:

MMBTH10-4LT1 onsemi
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MMBTH10-4LT1 onsemi NPN Bipolar Transistor, SOT-23 (TO-236) 3 LEAD, 3000-REEL
Pbfree Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer ON SEMICONDUCTOR
Part Package Code SOT-23 (TO-236) 3 LEAD
Package Description CASE 318-08, 3 PIN
Pin Count 3
Manufacturer Package Code 318
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer onsemi
Collector Current-Max (IC) 0.025 A
Collector-Base Capacitance-Max 0.7 pF
Collector-Emitter Voltage-Max 25 V
Configuration SINGLE
DC Current Gain-Min (hFE) 120
Highest Frequency Band ULTRA HIGH FREQUENCY BAND
JEDEC-95 Code TO-236AB
JESD-30 Code R-PDSO-G3
JESD-609 Code e0
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 235
Polarity/Channel Type NPN
Power Dissipation-Max (Abs) 0.3 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 800 MHz

Alternate Parts for MMBTH10-4LT1

This table gives cross-reference parts and alternative options found for MMBTH10-4LT1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MMBTH10-4LT1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
MMBTH10-4LT1G NPN Bipolar Transistor hFE 120 to 240; fT ≥ 800 MHz, SOT-23 (TO-236) 3 LEAD, 3000-REEL onsemi MMBTH10-4LT1 vs MMBTH10-4LT1G
MMBTH10LT1 UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-236AB Motorola Mobility LLC MMBTH10-4LT1 vs MMBTH10LT1
Part Number Description Manufacturer Compare
2SC4255 TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal Toshiba America Electronic Components MMBTH10-4LT1 vs 2SC4255
NE73430-T1 RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN California Eastern Laboratories (CEL) MMBTH10-4LT1 vs NE73430-T1
BF517 RF Small Signal Bipolar Transistor, 0.025A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, TO-236, SOT-23, 3 PIN Siemens MMBTH10-4LT1 vs BF517
BFP405 RF Small Signal Bipolar Transistor, 0.012A I(C), 1-Element, L Band, Silicon, NPN Siemens MMBTH10-4LT1 vs BFP405
2SC3513IS-TL UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MPAK-3 Renesas Electronics Corporation MMBTH10-4LT1 vs 2SC3513IS-TL
BFR180 RF Small Signal Bipolar Transistor, 0.004A I(C), 1-Element, L Band, Silicon, NPN, SOT-23, 3 PIN Infineon Technologies AG MMBTH10-4LT1 vs BFR180
2SC5098 TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, USQ, 2-2K1A, 4 PIN, BIP RF Small Signal Toshiba America Electronic Components MMBTH10-4LT1 vs 2SC5098
MRF904 RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, TO-72, TO-72, 4 PIN Advanced Semiconductor Inc MMBTH10-4LT1 vs MRF904
BFR183 RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, L Band, Silicon, NPN, ROHS COMPLIANT PACKAGE-3 Infineon Technologies AG MMBTH10-4LT1 vs BFR183
2SC5108 TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, 2-2H1A, SSM, 3 PIN, BIP RF Small Signal Toshiba America Electronic Components MMBTH10-4LT1 vs 2SC5108

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