Memory
MH56D72KTN-10
Mitsubishi Electric
Description: DDR DRAM Module, 256MX72, 0.8ns, CMOS, DIMM-184

Overview of MH56D72KTN-10 by Mitsubishi Electric

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
  • Distributor Offerings: ( 0 listings )
  • Number of FFF Equivalents: ( 0 replacements )
  • CAD Models: ( Request Part )
  • Number of Functional Equivalents: ( 10 options )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )

CAD Models for MH56D72KTN-10 by Mitsubishi Electric
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Part Data Attributes for MH56D72KTN-10 by Mitsubishi Electric

MH56D72KTN-10
Mitsubishi Electric
-
-
Part Life Cycle Code
Obsolete
Ihs Manufacturer
MITSUBISHI ELECTRIC CORP
Part Package Code
DIMM
Package Description
DIMM, DIMM184
Pin Count
184
Reach Compliance Code
unknown
ECCN Code
EAR99
HTS Code
8542.32.00.36
Access Mode
DUAL BANK PAGE BURST
Access Time-Max
0.8 ns
Additional Feature
AUTO/SELF REFRESH
Clock Frequency-Max (fCLK)
125 MHz
I/O Type
COMMON
JESD-30 Code
R-XDMA-N184
Memory Density
19327352832 bit
Memory IC Type
DDR DRAM MODULE
Memory Width
72
Number of Functions
1
Number of Ports
1
Number of Terminals
184
Number of Words
268435456 words
Number of Words Code
256000000
Operating Mode
SYNCHRONOUS
Operating Temperature-Max
70 °C
Operating Temperature-Min
Organization
256MX72
Output Characteristics
3-STATE
Package Body Material
UNSPECIFIED
Package Code
DIMM
Package Equivalence Code
DIMM184
Package Shape
RECTANGULAR
Package Style
MICROELECTRONIC ASSEMBLY
Qualification Status
Not Qualified
Refresh Cycles
8192
Self Refresh
YES
Standby Current-Max
1.234 A
Supply Current-Max
7.714 mA
Supply Voltage-Max (Vsup)
2.7 V
Supply Voltage-Min (Vsup)
2.3 V
Supply Voltage-Nom (Vsup)
2.5 V
Surface Mount
NO
Technology
CMOS
Temperature Grade
COMMERCIAL
Terminal Form
NO LEAD
Terminal Pitch
1.27 mm
Terminal Position
DUAL
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  1. MH56D72KTN-10
    Mitsubishi Electric
    DDR DRAM Module, 256MX72, 0.8ns, CMOS, DIMM-184
    VS

Alternate Parts for MH56D72KTN-10

This table gives cross-reference parts and alternative options found for MH56D72KTN-10. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MH56D72KTN-10, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
NT2GD72S4NC0FV-5T DDR DRAM Module, 256MX72, 0.7ns, CMOS, ROHS COMPLIANT, DIMM-184 Nanya Technology Corporation MH56D72KTN-10 vs NT2GD72S4NC0FV-5T
M312L5628MT0-CA0 DDR DRAM Module, 256MX72, 0.8ns, CMOS, DIMM-184 Samsung Semiconductor MH56D72KTN-10 vs M312L5628MT0-CA0
W3EG2128M72AFSR403AD3M DDR DRAM Module, 256MX72, 0.7ns, CMOS, DIMM-184 Microsemi Corporation MH56D72KTN-10 vs W3EG2128M72AFSR403AD3M
W3EG72255S202AJD3M DDR DRAM Module, 256MX72, 0.8ns, CMOS, DIMM-184 Microsemi Corporation MH56D72KTN-10 vs W3EG72255S202AJD3M
M312L5620AUS-CB3 DDR DRAM Module, 256MX72, 0.7ns, CMOS, ROHS COMPLIANT, DIMM-184 Samsung Semiconductor MH56D72KTN-10 vs M312L5620AUS-CB3
M312L5623AUS-CB3 DDR DRAM Module, 256MX72, 0.7ns, CMOS, ROHS COMPLIANT, DIMM-184 Samsung Semiconductor MH56D72KTN-10 vs M312L5623AUS-CB3
W3EG72256S263JD3M DDR DRAM Module, 256MX72, 0.75ns, CMOS, DIMM-184 Microsemi Corporation MH56D72KTN-10 vs W3EG72256S263JD3M
M312L5628BT0-CA0 DDR DRAM Module, 256MX72, 0.8ns, CMOS, DIMM-184 Samsung Semiconductor MH56D72KTN-10 vs M312L5628BT0-CA0
W3EG72256S263AJD3SG DDR DRAM Module, 256MX72, 0.75ns, CMOS, ROHS COMPLIANT, DIMM-184 Microsemi Corporation MH56D72KTN-10 vs W3EG72256S263AJD3SG
MT18VDDT25672LAIG-335XX DDR DRAM Module, 256MX72, 0.7ns, CMOS, DIMM-184 Micron Technology Inc MH56D72KTN-10 vs MT18VDDT25672LAIG-335XX

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