Part Details for M312L5620AUS-CB3 by Samsung Semiconductor
Overview of M312L5620AUS-CB3 by Samsung Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Computing and Data Storage
Part Details for M312L5620AUS-CB3
M312L5620AUS-CB3 CAD Models
M312L5620AUS-CB3 Part Data Attributes
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M312L5620AUS-CB3
Samsung Semiconductor
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Datasheet
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M312L5620AUS-CB3
Samsung Semiconductor
DDR DRAM Module, 256MX72, 0.7ns, CMOS, ROHS COMPLIANT, DIMM-184
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
Part Package Code | DIMM | |
Package Description | DIMM, DIMM184 | |
Pin Count | 184 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8542.32.00.36 | |
Access Mode | SINGLE BANK PAGE BURST | |
Access Time-Max | 0.7 ns | |
Additional Feature | AUTO/SELF REFRESH | |
Clock Frequency-Max (fCLK) | 166 MHz | |
I/O Type | COMMON | |
JESD-30 Code | R-XDMA-N184 | |
Memory Density | 19327352832 bit | |
Memory IC Type | DDR DRAM MODULE | |
Memory Width | 72 | |
Number of Functions | 1 | |
Number of Ports | 1 | |
Number of Terminals | 184 | |
Number of Words | 268435456 words | |
Number of Words Code | 256000000 | |
Operating Mode | SYNCHRONOUS | |
Operating Temperature-Max | 70 °C | |
Operating Temperature-Min | ||
Organization | 256MX72 | |
Output Characteristics | 3-STATE | |
Package Body Material | UNSPECIFIED | |
Package Code | DIMM | |
Package Equivalence Code | DIMM184 | |
Package Shape | RECTANGULAR | |
Package Style | MICROELECTRONIC ASSEMBLY | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Qualification Status | Not Qualified | |
Refresh Cycles | 8192 | |
Self Refresh | YES | |
Standby Current-Max | 0.65 A | |
Supply Current-Max | 6.69 mA | |
Supply Voltage-Max (Vsup) | 2.7 V | |
Supply Voltage-Min (Vsup) | 2.3 V | |
Supply Voltage-Nom (Vsup) | 2.5 V | |
Surface Mount | NO | |
Technology | CMOS | |
Temperature Grade | COMMERCIAL | |
Terminal Form | NO LEAD | |
Terminal Pitch | 1.27 mm | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Alternate Parts for M312L5620AUS-CB3
This table gives cross-reference parts and alternative options found for M312L5620AUS-CB3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of M312L5620AUS-CB3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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NT2GD72S4NC0FV-5T | DDR DRAM Module, 256MX72, 0.7ns, CMOS, ROHS COMPLIANT, DIMM-184 | Nanya Technology Corporation | M312L5620AUS-CB3 vs NT2GD72S4NC0FV-5T |
M312L5628MT0-CA0 | DDR DRAM Module, 256MX72, 0.8ns, CMOS, DIMM-184 | Samsung Semiconductor | M312L5620AUS-CB3 vs M312L5628MT0-CA0 |
W3EG2128M72AFSR403AD3M | DDR DRAM Module, 256MX72, 0.7ns, CMOS, DIMM-184 | Microsemi Corporation | M312L5620AUS-CB3 vs W3EG2128M72AFSR403AD3M |
W3EG72255S202AJD3M | DDR DRAM Module, 256MX72, 0.8ns, CMOS, DIMM-184 | Microsemi Corporation | M312L5620AUS-CB3 vs W3EG72255S202AJD3M |
M312L5623AUS-CB3 | DDR DRAM Module, 256MX72, 0.7ns, CMOS, ROHS COMPLIANT, DIMM-184 | Samsung Semiconductor | M312L5620AUS-CB3 vs M312L5623AUS-CB3 |
W3EG72256S263JD3M | DDR DRAM Module, 256MX72, 0.75ns, CMOS, DIMM-184 | Microsemi Corporation | M312L5620AUS-CB3 vs W3EG72256S263JD3M |
M312L5628BT0-CA0 | DDR DRAM Module, 256MX72, 0.8ns, CMOS, DIMM-184 | Samsung Semiconductor | M312L5620AUS-CB3 vs M312L5628BT0-CA0 |
W3EG72256S263AJD3SG | DDR DRAM Module, 256MX72, 0.75ns, CMOS, ROHS COMPLIANT, DIMM-184 | Microsemi Corporation | M312L5620AUS-CB3 vs W3EG72256S263AJD3SG |
MT18VDDT25672LAIG-335XX | DDR DRAM Module, 256MX72, 0.7ns, CMOS, DIMM-184 | Micron Technology Inc | M312L5620AUS-CB3 vs MT18VDDT25672LAIG-335XX |
MT18VDDT25672DG-26AXX | DDR DRAM Module, 256MX72, 0.75ns, CMOS, DIMM-184 | Micron Technology Inc | M312L5620AUS-CB3 vs MT18VDDT25672DG-26AXX |