Part Details for MGFS52BN2122A by Mitsubishi Electric
Overview of MGFS52BN2122A by Mitsubishi Electric
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Part Details for MGFS52BN2122A
MGFS52BN2122A CAD Models
MGFS52BN2122A Part Data Attributes:
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MGFS52BN2122A
Mitsubishi Electric
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MGFS52BN2122A
Mitsubishi Electric
RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-49, 5 PIN
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Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | MITSUBISHI ELECTRIC CORP | |
Package Description | FLANGE MOUNT, R-CDFM-F4 | |
Pin Count | 5 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.75 | |
Additional Feature | HIGH RELIABILITY | |
Case Connection | SOURCE | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 12 V | |
Drain Current-Max (ID) | 4 A | |
FET Technology | JUNCTION | |
Highest Frequency Band | S BAND | |
JESD-30 Code | R-CDFM-F4 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Mode | DEPLETION MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 187.5 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | GALLIUM ARSENIDE |