Datasheets
MC-4516CD641ES-A10 by:

Synchronous DRAM Module, 16MX64, 6ns, CMOS, SOCKET TYPE, SODIMM-144

Part Details for MC-4516CD641ES-A10 by Elpida Memory Inc

Overview of MC-4516CD641ES-A10 by Elpida Memory Inc

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Applications Computing and Data Storage

Part Details for MC-4516CD641ES-A10

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MC-4516CD641ES-A10 Part Data Attributes:

MC-4516CD641ES-A10 Elpida Memory Inc
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MC-4516CD641ES-A10 Elpida Memory Inc Synchronous DRAM Module, 16MX64, 6ns, CMOS, SOCKET TYPE, SODIMM-144
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer ELPIDA MEMORY INC
Part Package Code MODULE
Package Description DIMM, DIMM144,32
Pin Count 144
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8542.32.00.32
Access Mode FOUR BANK PAGE BURST
Access Time-Max 6 ns
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 100 MHz
I/O Type COMMON
JESD-30 Code R-XDMA-N144
Memory Density 1073741824 bit
Memory IC Type SYNCHRONOUS DRAM MODULE
Memory Width 64
Moisture Sensitivity Level 1
Number of Functions 1
Number of Ports 1
Number of Terminals 144
Number of Words 16777216 words
Number of Words Code 16000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 16MX64
Output Characteristics 3-STATE
Package Body Material UNSPECIFIED
Package Code DIMM
Package Equivalence Code DIMM144,32
Package Shape RECTANGULAR
Package Style MICROELECTRONIC ASSEMBLY
Qualification Status Not Qualified
Refresh Cycles 4096
Self Refresh YES
Standby Current-Max 0.008 A
Supply Current-Max 1.04 mA
Supply Voltage-Max (Vsup) 3.6 V
Supply Voltage-Min (Vsup) 3 V
Supply Voltage-Nom (Vsup) 3.3 V
Surface Mount NO
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Form NO LEAD
Terminal Pitch 0.8 mm
Terminal Position DUAL

Alternate Parts for MC-4516CD641ES-A10

This table gives cross-reference parts and alternative options found for MC-4516CD641ES-A10. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MC-4516CD641ES-A10, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
MC-4516CD641XS-A10 Synchronous DRAM Module, 16MX64, 6ns, CMOS, SOCKET TYPE, SODIMM-144 Elpida Memory Inc MC-4516CD641ES-A10 vs MC-4516CD641XS-A10
HYM71V16M655HCT6-P Synchronous DRAM Module, 16MX64, 6ns, CMOS, DIMM-168 SK Hynix Inc MC-4516CD641ES-A10 vs HYM71V16M655HCT6-P
MH16S64APFC-8 Synchronous DRAM Module, 16MX64, 6ns, CMOS, DIMM-144 Mitsubishi Electric MC-4516CD641ES-A10 vs MH16S64APFC-8
GMM26417227ANTG-7J Synchronous DRAM Module, 16MX64, 6ns, CMOS, LG Semicon Co Ltd MC-4516CD641ES-A10 vs GMM26417227ANTG-7J
MC-4516CD641PS-A10 Synchronous DRAM Module, 16MX64, 6ns, CMOS, SOCKET TYPE, SODIMM-144 Elpida Memory Inc MC-4516CD641ES-A10 vs MC-4516CD641PS-A10
GMM26417228ANTG-7K Synchronous DRAM Module, 16MX64, 6ns, CMOS, SODIMM-144 SK Hynix Inc MC-4516CD641ES-A10 vs GMM26417228ANTG-7K
GMM26417228ANTG-7J Synchronous DRAM Module, 16MX64, 6ns, CMOS, LG Semicon Co Ltd MC-4516CD641ES-A10 vs GMM26417228ANTG-7J
MH16S64PFC-8 Synchronous DRAM Module, 16MX64, 6ns, CMOS, DIMM-144 Mitsubishi Electric MC-4516CD641ES-A10 vs MH16S64PFC-8
Part Number Description Manufacturer Compare
HYS64V16221GDL-8-C2 Synchronous DRAM Module, 16MX64, 6ns, CMOS, SODIMM-144 Infineon Technologies AG MC-4516CD641ES-A10 vs HYS64V16221GDL-8-C2
V436616Y04VTG-75 Synchronous DRAM Module, 16MX64, 5.4ns, CMOS, SODIMM-144 Mosel Vitelic Corporation MC-4516CD641ES-A10 vs V436616Y04VTG-75
HB56SW1664DBC-6A EDO DRAM Module, 16MX64, 60ns, CMOS, SODIMM-144 Hitachi Ltd MC-4516CD641ES-A10 vs HB56SW1664DBC-6A
HYM71V16M655HCT8-S Synchronous DRAM Module, 16MX64, 6ns, CMOS, SODIMM-144 SK Hynix Inc MC-4516CD641ES-A10 vs HYM71V16M655HCT8-S
HYM71V16M655HCT8-8 Synchronous DRAM Module, 16MX64, 6ns, CMOS, SODIMM-144 SK Hynix Inc MC-4516CD641ES-A10 vs HYM71V16M655HCT8-8
THLY6416G1FG-80L IC 16M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA144, SODIMM-144, Dynamic RAM Toshiba America Electronic Components MC-4516CD641ES-A10 vs THLY6416G1FG-80L
W3DG6418V10AD1-MG Synchronous DRAM Module, 16MX64, 6ns, CMOS, ROHS COMPLIANT, SO-DIMM-144 Microsemi Corporation MC-4516CD641ES-A10 vs W3DG6418V10AD1-MG
MT8LSDT1664LHY-13EB1 Synchronous DRAM Module, 16MX64, 5.4ns, CMOS, SODIMM-144 Micron Technology Inc MC-4516CD641ES-A10 vs MT8LSDT1664LHY-13EB1
HYS64V16220GCDL-8-B Synchronous DRAM Module, 16MX64, 6ns, CMOS, SODIMM-144 Infineon Technologies AG MC-4516CD641ES-A10 vs HYS64V16220GCDL-8-B
GMM26417228ANTG-8 Synchronous DRAM Module, 16MX64, 6ns, CMOS, LG Semicon Co Ltd MC-4516CD641ES-A10 vs GMM26417228ANTG-8

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