Datasheets
M53D128168A-7.5BG by: Elite Semiconductor Memory Technology Inc

DDR DRAM, 8MX16, 7ns, CMOS, PBGA60, 8 X 10 MM, LEAD FREE, BGA-60

Part Details for M53D128168A-7.5BG by Elite Semiconductor Memory Technology Inc

Overview of M53D128168A-7.5BG by Elite Semiconductor Memory Technology Inc

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Applications Internet of Things (IoT) Environmental Monitoring Financial Technology (Fintech) Smart Cities Transportation and Logistics Agriculture Technology Telecommunications Virtual Reality (VR), Augmented Reality (AR), and Vision Systems Education and Research Consumer Electronics Security and Surveillance Audio and Video Systems Computing and Data Storage Healthcare Entertainment and Gaming

Part Details for M53D128168A-7.5BG

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M53D128168A-7.5BG Part Data Attributes

M53D128168A-7.5BG Elite Semiconductor Memory Technology Inc
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M53D128168A-7.5BG Elite Semiconductor Memory Technology Inc DDR DRAM, 8MX16, 7ns, CMOS, PBGA60, 8 X 10 MM, LEAD FREE, BGA-60
Part Life Cycle Code Contact Manufacturer
Ihs Manufacturer ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC
Part Package Code BGA
Package Description VFBGA,
Pin Count 60
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8542.32.00.02
Access Mode FOUR BANK PAGE BURST
Access Time-Max 7 ns
Additional Feature AUTO/SELF REFRESH
JESD-30 Code R-PBGA-B60
Length 10 mm
Memory Density 134217728 bit
Memory IC Type DDR DRAM
Memory Width 16
Number of Functions 1
Number of Ports 1
Number of Terminals 60
Number of Words 8388608 words
Number of Words Code 8000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 8MX16
Package Body Material PLASTIC/EPOXY
Package Code VFBGA
Package Shape RECTANGULAR
Package Style GRID ARRAY, VERY THIN PROFILE, FINE PITCH
Qualification Status Not Qualified
Seated Height-Max 1 mm
Self Refresh YES
Supply Voltage-Max (Vsup) 1.9 V
Supply Voltage-Min (Vsup) 1.7 V
Supply Voltage-Nom (Vsup) 1.8 V
Surface Mount YES
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Form BALL
Terminal Pitch 0.8 mm
Terminal Position BOTTOM
Width 8 mm

Alternate Parts for M53D128168A-7.5BG

This table gives cross-reference parts and alternative options found for M53D128168A-7.5BG. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of M53D128168A-7.5BG, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
MT46H8M16LFCF-10IT:B DDR DRAM, 8MX16, 7ns, CMOS, PBGA60, 8 MM X 10 MM, LEAD FREE, VFBGA-60 Micron Technology Inc M53D128168A-7.5BG vs MT46H8M16LFCF-10IT:B
MT46H8M16LFCF-10 DDR DRAM, 8MX16, 7ns, CMOS, PBGA60, 8 MM X 10 MM, LEAD FREE, VFBGA-60 Micron Technology Inc M53D128168A-7.5BG vs MT46H8M16LFCF-10
MT46H8M16LFCF-10IT DDR DRAM, 8MX16, 7ns, CMOS, PBGA60, 8 MM X 10 MM, LEAD FREE, VFBGA-60 Micron Technology Inc M53D128168A-7.5BG vs MT46H8M16LFCF-10IT
MT46H8M16LF-10 DDR DRAM, 8MX16, 7ns, CMOS, PBGA60, 8 X 10 MM, LEAD FREE, PLASTIC, VFBGA-60 Micron Technology Inc M53D128168A-7.5BG vs MT46H8M16LF-10
Part Number Description Manufacturer Compare
K4H561638J-HICC0 DDR DRAM, 16MX16, 0.65ns, CMOS, PBGA60, HALOGEN FREE AND ROHS COMPLIANT, FBGA-60 Samsung Semiconductor M53D128168A-7.5BG vs K4H561638J-HICC0
MT48LC8M16A2BB-6AIT Synchronous DRAM, 8MX16, 5.4ns, CMOS, PBGA60, 8 X 16 MM, LEAD FREE, PLASTIC, FBGA-60 Micron Technology Inc M53D128168A-7.5BG vs MT48LC8M16A2BB-6AIT
MT46H8M16LF-10IT DDR DRAM, 8MX16, 7ns, CMOS, PBGA60, 8 X 10 MM, LEAD FREE, PLASTIC, VFBGA-60 Micron Technology Inc M53D128168A-7.5BG vs MT46H8M16LF-10IT
V54C3256164VDUS7IPC Synchronous DRAM, 16MX16, 5.4ns, CMOS, PBGA60, MO-210, FBGA-60 ProMOS Technologies Inc M53D128168A-7.5BG vs V54C3256164VDUS7IPC
MT46V16M16BJ-75EH DDR DRAM, 16MX16, 0.75ns, CMOS, PBGA60, 16 X 9 MM, PLASTIC, FBGA-60 Micron Technology Inc M53D128168A-7.5BG vs MT46V16M16BJ-75EH
MT46V16M16FG-75:F DDR DRAM, 16MX16, 0.75ns, CMOS, PBGA60, (8 X 14) MM, PLASTIC, FBGA-60 Micron Technology Inc M53D128168A-7.5BG vs MT46V16M16FG-75:F
V54C3256164VBF8PC Synchronous DRAM, 16MX16, 6ns, CMOS, PBGA60, LEAD FREE, MO-210, FBGA-60 ProMOS Technologies Inc M53D128168A-7.5BG vs V54C3256164VBF8PC
V54C3128164VCUJ8HPC Synchronous DRAM, 8MX16, CMOS, PBGA60, GREEN, MO-210, FBGA-60 ProMOS Technologies Inc M53D128168A-7.5BG vs V54C3128164VCUJ8HPC
MT46V16M16BG-75Z:G DDR DRAM, 16MX16, 0.75ns, CMOS, PBGA60, (8 X 14) MM, LEAD FREE,PLASTIC, FBGA-60 Micron Technology Inc M53D128168A-7.5BG vs MT46V16M16BG-75Z:G
V54C3256164VDJ7I Synchronous DRAM, 16MX16, 5.4ns, CMOS, PBGA60, GREEN, MO-210, FBGA-60 ProMOS Technologies Inc M53D128168A-7.5BG vs V54C3256164VDJ7I

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