LBAS40BST5G
LRC Leshan Radio Co Ltd
Description: Rectifier Diode, Schottky, 1 Element, 0.12A, 40V V(RRM), Silicon,

Overview of LBAS40BST5G by LRC Leshan Radio Co Ltd

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Part Data Attributes for LBAS40BST5G by LRC Leshan Radio Co Ltd

LBAS40BST5G
LRC Leshan Radio Co Ltd
-
-
Part Life Cycle Code
Active
Ihs Manufacturer
LESHAN RADIO CO LTD
Package Description
R-PBCC-N2
Reach Compliance Code
unknown
ECCN Code
EAR99
HTS Code
8541.10.00.70
Application
GENERAL PURPOSE
Configuration
SINGLE
Diode Element Material
SILICON
Diode Type
RECTIFIER DIODE
JESD-30 Code
R-PBCC-N2
Number of Elements
1
Number of Phases
1
Number of Terminals
2
Operating Temperature-Max
150 °C
Operating Temperature-Min
-65 °C
Output Current-Max
0.12 A
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
CHIP CARRIER
Peak Reflow Temperature (Cel)
260
Rep Pk Reverse Voltage-Max
40 V
Surface Mount
YES
Technology
SCHOTTKY
Terminal Form
NO LEAD
Terminal Position
BOTTOM
Time@Peak Reflow Temperature-Max (s)
10
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  1. LBAS40BST5G
    LRC Leshan Radio Co Ltd
    Rectifier Diode, Schottky, 1 Element, 0.12A, 40V V(RRM), Silicon,
    VS

Alternate Parts for LBAS40BST5G

This table gives cross-reference parts and alternative options found for LBAS40BST5G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of LBAS40BST5G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
LBAS40BST1G Rectifier Diode, Schottky, 1 Element, 0.12A, 40V V(RRM), Silicon, LRC Leshan Radio Co Ltd LBAS40BST5G vs LBAS40BST1G
BAS40L Rectifier Diode, Schottky, 1 Phase, 1 Element, 0.2A, 40V V(RRM), Silicon, DFN1006-2 Galaxy Microelectronics LBAS40BST5G vs BAS40L
S-LBAS40BST5G Rectifier Diode, Schottky, 1 Element, 0.12A, 40V V(RRM), Silicon, LRC Leshan Radio Co Ltd LBAS40BST5G vs S-LBAS40BST5G
BAS40L Rectifier Diode, Schottky, 1 Element, 0.12A, 40V V(RRM), Silicon Nexperia LBAS40BST5G vs BAS40L
BAS40L,315 BAS40L - General-purpose Schottky diode@en-us DFN 2-Pin Nexperia LBAS40BST5G vs BAS40L,315
S-LBAS40BST1G Rectifier Diode, Schottky, 1 Element, 0.12A, 40V V(RRM), Silicon, LRC Leshan Radio Co Ltd LBAS40BST5G vs S-LBAS40BST1G
LBAS40BST3G Rectifier Diode, Schottky, 1 Element, 0.12A, 40V V(RRM), Silicon, LRC Leshan Radio Co Ltd LBAS40BST5G vs LBAS40BST3G
Part Number Description Manufacturer Compare
BAS40LT1 120 mA, 40 V, Schottky Diode, SOT-23 (TO-236) 3 LEAD, 3000-REEL onsemi LBAS40BST5G vs BAS40LT1
BAS40LT3G 120 mA, 40 V, Schottky Diode, SOT-23 (TO-236) 3 LEAD, 10000-REEL onsemi LBAS40BST5G vs BAS40LT3G
S-LBAS40BST5G Rectifier Diode, Schottky, 1 Element, 0.12A, 40V V(RRM), Silicon, LRC Leshan Radio Co Ltd LBAS40BST5G vs S-LBAS40BST5G
BAS40L Rectifier Diode, Schottky, 1 Element, 0.12A, 40V V(RRM), Silicon Nexperia LBAS40BST5G vs BAS40L
BAS40LT3 SILICON, SIGNAL DIODE, TO-236AB, PLASTIC, CASE 318-08, 3 PIN Motorola Mobility LLC LBAS40BST5G vs BAS40LT3
BAS40-02L Rectifier Diode, Schottky, 1 Element, 0.12A, 40V V(RRM), Silicon, LEADLESS, TSLP-2-1, 2 PIN Infineon Technologies AG LBAS40BST5G vs BAS40-02L
BAS40H Rectifier Diode, Schottky, 1 Element, 0.12A, 40V V(RRM), Silicon Nexperia LBAS40BST5G vs BAS40H
LBAS40BST3G Rectifier Diode, Schottky, 1 Element, 0.12A, 40V V(RRM), Silicon, LRC Leshan Radio Co Ltd LBAS40BST5G vs LBAS40BST3G
BAS40-02LE6327 Rectifier Diode, Schottky, 1 Element, 0.12A, 40V V(RRM), Silicon, LEADLESS, TSLP-2 Infineon Technologies AG LBAS40BST5G vs BAS40-02LE6327
LBAS40BST1G Rectifier Diode, Schottky, 1 Element, 0.12A, 40V V(RRM), Silicon, LRC Leshan Radio Co Ltd LBAS40BST5G vs LBAS40BST1G

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