Datasheets
LBAS40BST3G by: LRC Leshan Radio Co Ltd

Rectifier Diode, Schottky, 1 Element, 0.12A, 40V V(RRM), Silicon,

Part Details for LBAS40BST3G by LRC Leshan Radio Co Ltd

Overview of LBAS40BST3G by LRC Leshan Radio Co Ltd

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Part Details for LBAS40BST3G

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LBAS40BST3G Part Data Attributes

LBAS40BST3G LRC Leshan Radio Co Ltd
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LBAS40BST3G LRC Leshan Radio Co Ltd Rectifier Diode, Schottky, 1 Element, 0.12A, 40V V(RRM), Silicon,
Part Life Cycle Code Active
Ihs Manufacturer LESHAN RADIO CO LTD
Package Description R-PBCC-N2
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.10.00.70
Application GENERAL PURPOSE
Configuration SINGLE
Diode Element Material SILICON
Diode Type RECTIFIER DIODE
JESD-30 Code R-PBCC-N2
Number of Elements 1
Number of Phases 1
Number of Terminals 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -65 °C
Output Current-Max 0.12 A
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style CHIP CARRIER
Peak Reflow Temperature (Cel) 260
Rep Pk Reverse Voltage-Max 40 V
Surface Mount YES
Technology SCHOTTKY
Terminal Form NO LEAD
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) 10

Alternate Parts for LBAS40BST3G

This table gives cross-reference parts and alternative options found for LBAS40BST3G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of LBAS40BST3G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
LBAS40BST1G Rectifier Diode, Schottky, 1 Element, 0.12A, 40V V(RRM), Silicon, LRC Leshan Radio Co Ltd LBAS40BST3G vs LBAS40BST1G
BAS40L Rectifier Diode, Schottky, 1 Phase, 1 Element, 0.2A, 40V V(RRM), Silicon, DFN1006-2 Galaxy Microelectronics LBAS40BST3G vs BAS40L
S-LBAS40BST5G Rectifier Diode, Schottky, 1 Element, 0.12A, 40V V(RRM), Silicon, LRC Leshan Radio Co Ltd LBAS40BST3G vs S-LBAS40BST5G
BAS40L Rectifier Diode, Schottky, 1 Element, 0.12A, 40V V(RRM), Silicon Nexperia LBAS40BST3G vs BAS40L
BAS40L,315 BAS40L - General-purpose Schottky diode@en-us DFN 2-Pin Nexperia LBAS40BST3G vs BAS40L,315
S-LBAS40BST1G Rectifier Diode, Schottky, 1 Element, 0.12A, 40V V(RRM), Silicon, LRC Leshan Radio Co Ltd LBAS40BST3G vs S-LBAS40BST1G
Part Number Description Manufacturer Compare
BAS40LT1 120 mA, 40 V, Schottky Diode, SOT-23 (TO-236) 3 LEAD, 3000-REEL onsemi LBAS40BST3G vs BAS40LT1
BAS40LT3G 120 mA, 40 V, Schottky Diode, SOT-23 (TO-236) 3 LEAD, 10000-REEL onsemi LBAS40BST3G vs BAS40LT3G
S-LBAS40BST5G Rectifier Diode, Schottky, 1 Element, 0.12A, 40V V(RRM), Silicon, LRC Leshan Radio Co Ltd LBAS40BST3G vs S-LBAS40BST5G
BAS40L Rectifier Diode, Schottky, 1 Element, 0.12A, 40V V(RRM), Silicon Nexperia LBAS40BST3G vs BAS40L
BAS40LT3 SILICON, SIGNAL DIODE, TO-236AB, PLASTIC, CASE 318-08, 3 PIN Motorola Mobility LLC LBAS40BST3G vs BAS40LT3
BAS40-02L Rectifier Diode, Schottky, 1 Element, 0.12A, 40V V(RRM), Silicon, LEADLESS, TSLP-2-1, 2 PIN Infineon Technologies AG LBAS40BST3G vs BAS40-02L
BAS40H Rectifier Diode, Schottky, 1 Element, 0.12A, 40V V(RRM), Silicon Nexperia LBAS40BST3G vs BAS40H
BAS40-02LE6327 Rectifier Diode, Schottky, 1 Element, 0.12A, 40V V(RRM), Silicon, LEADLESS, TSLP-2 Infineon Technologies AG LBAS40BST3G vs BAS40-02LE6327
LBAS40BST1G Rectifier Diode, Schottky, 1 Element, 0.12A, 40V V(RRM), Silicon, LRC Leshan Radio Co Ltd LBAS40BST3G vs LBAS40BST1G
BAS4002LE6327XTMA1 Rectifier Diode, Schottky, 1 Element, 0.12A, 40V V(RRM), Silicon, ROHS COMPLIANT, LEADLESS, TSLP-2-1, 2 PIN Infineon Technologies AG LBAS40BST3G vs BAS4002LE6327XTMA1

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