Part Details for KSH112I by Fairchild Semiconductor Corporation
Overview of KSH112I by Fairchild Semiconductor Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (3 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for KSH112I
KSH112I CAD Models
KSH112I Part Data Attributes:
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KSH112I
Fairchild Semiconductor Corporation
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Datasheet
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KSH112I
Fairchild Semiconductor Corporation
2 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-251, IPAK-3
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Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
Part Package Code | TO-251 | |
Package Description | IN-LINE, R-PSIP-T3 | |
Pin Count | 3 | |
Reach Compliance Code | unknown | |
Additional Feature | BUILT IN BIAS RESISTANCE RATIO IS 0.06 | |
Collector Current-Max (IC) | 2 A | |
Collector-Emitter Voltage-Max | 100 V | |
Configuration | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | |
DC Current Gain-Min (hFE) | 200 | |
JEDEC-95 Code | TO-251 | |
JESD-30 Code | R-PSIP-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | IN-LINE | |
Polarity/Channel Type | NPN | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Element Material | SILICON | |
Transition Frequency-Nom (fT) | 25 MHz |
Alternate Parts for KSH112I
This table gives cross-reference parts and alternative options found for KSH112I. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of KSH112I, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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KSH112-I | Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin | Samsung Semiconductor | KSH112I vs KSH112-I |
KSH117-I | Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, IPAK-3 | Samsung Semiconductor | KSH112I vs KSH117-I |
KSH117I | 2 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-251, IPAK-3 | Fairchild Semiconductor Corporation | KSH112I vs KSH117I |