Part Details for K4S643232H-TC70 by Samsung Semiconductor
Overview of K4S643232H-TC70 by Samsung Semiconductor
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Internet of Things (IoT)
Industrial Automation
Computing and Data Storage
Renewable Energy
Robotics and Drones
Available Datasheets
Part # | Manufacturer | Description | Datasheet |
---|---|---|---|
5315TC-704XGBD | Coilcraft Inc | General Purpose Inductor, 700uH, 2%, 1 Element, SMD | |
5315TC-704XGBB | Coilcraft Inc | General Purpose Inductor, 700uH, 2%, 1 Element, SMD | |
5315TC-704XGLB | Coilcraft Inc | General Purpose Inductor, 700uH, 2%, 1 Element, SMD, 5415, ROHS COMPLIANT |
Price & Stock for K4S643232H-TC70
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 240 |
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RFQ | ||
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Bristol Electronics | 88 |
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RFQ | ||
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Quest Components | SDRAM, 2M x 32, 86 Pin, Plastic, TSSOP | 192 |
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$2.3125 / $3.7500 | Buy Now |
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Quest Components | SDRAM, 2M x 32, 86 Pin, Plastic, TSSOP | 70 |
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$3.8295 / $6.2100 | Buy Now |
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Quest Components | SDRAM, 2M x 32, 86 Pin, Plastic, TSSOP | 2 |
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$3.7500 | Buy Now |
Part Details for K4S643232H-TC70
K4S643232H-TC70 CAD Models
K4S643232H-TC70 Part Data Attributes
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K4S643232H-TC70
Samsung Semiconductor
Buy Now
Datasheet
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Compare Parts:
K4S643232H-TC70
Samsung Semiconductor
Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86
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Pbfree Code | No | |
Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8542.32.00.02 | |
Access Time-Max | 5.5 ns | |
Clock Frequency-Max (fCLK) | 143 MHz | |
I/O Type | COMMON | |
Interleaved Burst Length | 1,2,4,8 | |
JESD-30 Code | R-PDSO-G86 | |
JESD-609 Code | e0 | |
Memory Density | 67108864 bit | |
Memory IC Type | SYNCHRONOUS DRAM | |
Memory Width | 32 | |
Moisture Sensitivity Level | 3 | |
Number of Terminals | 86 | |
Number of Words | 2097152 words | |
Number of Words Code | 2000000 | |
Operating Temperature-Max | 70 °C | |
Operating Temperature-Min | ||
Organization | 2MX32 | |
Output Characteristics | 3-STATE | |
Package Body Material | PLASTIC/EPOXY | |
Package Code | TSSOP | |
Package Equivalence Code | TSSOP86,.46,20 | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | |
Qualification Status | Not Qualified | |
Refresh Cycles | 4096 | |
Sequential Burst Length | 1,2,4,8,FP | |
Standby Current-Max | 0.002 A | |
Supply Current-Max | 0.14 mA | |
Supply Voltage-Nom (Vsup) | 3.3 V | |
Surface Mount | YES | |
Technology | CMOS | |
Temperature Grade | COMMERCIAL | |
Terminal Finish | TIN LEAD | |
Terminal Form | GULL WING | |
Terminal Pitch | 0.5 mm | |
Terminal Position | DUAL |
Alternate Parts for K4S643232H-TC70
This table gives cross-reference parts and alternative options found for K4S643232H-TC70. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4S643232H-TC70, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
HY57V643220CTP-7 | Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.5 MM PITCH, LEAD FREE, TSOP2-86 | SK Hynix Inc | K4S643232H-TC70 vs HY57V643220CTP-7 |
HY57V653220BTC-7 | Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86 | SK Hynix Inc | K4S643232H-TC70 vs HY57V653220BTC-7 |
K4S643232F-TC70 | Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86 | Samsung Semiconductor | K4S643232H-TC70 vs K4S643232F-TC70 |
HY57V643220CT-7 | Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.5 MM PITCH, TSOP2-86 | SK Hynix Inc | K4S643232H-TC70 vs HY57V643220CT-7 |
HY57V653220CTC-7 | Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86 | SK Hynix Inc | K4S643232H-TC70 vs HY57V653220CTC-7 |
HY57V643220CT-7I | Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, 0.400 X 0.875 INCH, TSOP2-86 | SK Hynix Inc | K4S643232H-TC70 vs HY57V643220CT-7I |
HY57V643220DT-7 | Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86 | SK Hynix Inc | K4S643232H-TC70 vs HY57V643220DT-7 |
IS42S32200-7TL | Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, 0.400 INCH, LEAD FREE, TSOP2-86 | Integrated Silicon Solution Inc | K4S643232H-TC70 vs IS42S32200-7TL |
IS42S32200E-7TL-TR | Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, 0.400 INCH, LEAD FREE, TSOP2-86 | Integrated Silicon Solution Inc | K4S643232H-TC70 vs IS42S32200E-7TL-TR |
IS42S32200-7TLI | Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, 0.400 INCH, LEAD FREE, TSOP2-86 | Integrated Silicon Solution Inc | K4S643232H-TC70 vs IS42S32200-7TLI |