Part Details for V54C365324V-8 by Mosel Vitelic Corporation
Overview of V54C365324V-8 by Mosel Vitelic Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Education and Research
Computing and Data Storage
Part Details for V54C365324V-8
V54C365324V-8 CAD Models
V54C365324V-8 Part Data Attributes
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V54C365324V-8
Mosel Vitelic Corporation
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Datasheet
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V54C365324V-8
Mosel Vitelic Corporation
Synchronous DRAM, 2MX32, 6ns, CMOS, PDSO86, 0.400 X 0.875 INCH, TSOP2-86
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | MOSEL-VITELIC | |
| Part Package Code | TSOP2 | |
| Package Description | SOP, TSSOP86,.46,20 | |
| Pin Count | 86 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.02 | |
| Access Mode | FOUR BANK PAGE BURST | |
| Access Time-Max | 6 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 125 MHz | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 1,2,4,8 | |
| JESD-30 Code | R-PDSO-G86 | |
| JESD-609 Code | e0 | |
| Memory Density | 67108864 bit | |
| Memory IC Type | SYNCHRONOUS DRAM | |
| Memory Width | 32 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 86 | |
| Number of Words | 2097152 words | |
| Number of Words Code | 2000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 2MX32 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | SOP | |
| Package Equivalence Code | TSSOP86,.46,20 | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 2048 | |
| Self Refresh | YES | |
| Sequential Burst Length | 1,2,4,8,FP | |
| Standby Current-Max | 0.002 A | |
| Supply Current-Max | 0.25 mA | |
| Supply Voltage-Max (Vsup) | 3.6 V | |
| Supply Voltage-Min (Vsup) | 3 V | |
| Supply Voltage-Nom (Vsup) | 3.3 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | GULL WING | |
| Terminal Pitch | 0.5 mm | |
| Terminal Position | DUAL |
Alternate Parts for V54C365324V-8
This table gives cross-reference parts and alternative options found for V54C365324V-8. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of V54C365324V-8, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| K4S643232C-TC80 | Synchronous DRAM, 2MX32, 6ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86 | Samsung Semiconductor | V54C365324V-8 vs K4S643232C-TC80 |
| M12L64322A-5TG | Synchronous DRAM, 2MX32, 4.5ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, LEAD FREE, TSOP2-86 | Elite Semiconductor Memory Technology Inc | V54C365324V-8 vs M12L64322A-5TG |
| HY57V643220CT-55I | Synchronous DRAM, 2MX32, 5ns, CMOS, PDSO86, 0.400 X 0.875 INCH, TSOP2-86 | SK Hynix Inc | V54C365324V-8 vs HY57V643220CT-55I |
| HY57V643220CLTP-5 | Synchronous DRAM, 2MX32, 4.5ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.5 MM PITCH, LEAD FREE, TSOP2-86 | SK Hynix Inc | V54C365324V-8 vs HY57V643220CLTP-5 |
| M2V64S50ETP-6I | Synchronous DRAM, 2MX32, 5.4ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86 | Elpida Memory Inc | V54C365324V-8 vs M2V64S50ETP-6I |
| M2V64S50ETP-5L | Synchronous DRAM, 2MX32, 5.4ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86 | Elpida Memory Inc | V54C365324V-8 vs M2V64S50ETP-5L |
| MB811643221A-67FN | 2MX32 SYNCHRONOUS DRAM, PDSO86, 0.400 INCH, 0.50 MM PITCH, TSOP2-86 | FUJITSU Limited | V54C365324V-8 vs MB811643221A-67FN |
| MT48LC2M32B1TG-75 | Synchronous DRAM, 2MX32, 6ns, CMOS, PDSO86, 0.400 INCH, PLASTIC, TSOP-86 | Micron Technology Inc | V54C365324V-8 vs MT48LC2M32B1TG-75 |
| TC59S6432DFTL-80 | IC 2M X 32 SYNCHRONOUS DRAM, 6 ns, PDSO86, 0.400 ICNH, 0.50 MM PITCH, PLASTIC, TSOP2-86, Dynamic RAM | Toshiba America Electronic Components | V54C365324V-8 vs TC59S6432DFTL-80 |
| K4S643232F-TL550 | Synchronous DRAM, 2MX32, 5ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86 | Samsung Semiconductor | V54C365324V-8 vs K4S643232F-TL550 |