Part Details for K4D26323AA-GL40 by Samsung Semiconductor
Overview of K4D26323AA-GL40 by Samsung Semiconductor
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Price & Stock for K4D26323AA-GL40
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 35 |
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RFQ |
Part Details for K4D26323AA-GL40
K4D26323AA-GL40 CAD Models
K4D26323AA-GL40 Part Data Attributes
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K4D26323AA-GL40
Samsung Semiconductor
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Datasheet
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K4D26323AA-GL40
Samsung Semiconductor
DDR DRAM, 4MX32, 0.6ns, CMOS, PBGA144, FBGA-144
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
Part Package Code | BGA | |
Package Description | LFBGA, BGA144,12X12,32 | |
Pin Count | 144 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8542.32.00.02 | |
Access Mode | FOUR BANK PAGE BURST | |
Access Time-Max | 0.6 ns | |
Additional Feature | AUTO/SELF REFRESH | |
Clock Frequency-Max (fCLK) | 250 MHz | |
I/O Type | COMMON | |
Interleaved Burst Length | 2,4,8 | |
JESD-30 Code | S-PBGA-B144 | |
JESD-609 Code | e0 | |
Length | 12 mm | |
Memory Density | 134217728 bit | |
Memory IC Type | DDR1 DRAM | |
Memory Width | 32 | |
Number of Functions | 1 | |
Number of Ports | 1 | |
Number of Terminals | 144 | |
Number of Words | 4194304 words | |
Number of Words Code | 4000000 | |
Operating Mode | SYNCHRONOUS | |
Organization | 4MX32 | |
Output Characteristics | 3-STATE | |
Package Body Material | PLASTIC/EPOXY | |
Package Code | LFBGA | |
Package Equivalence Code | BGA144,12X12,32 | |
Package Shape | SQUARE | |
Package Style | GRID ARRAY, LOW PROFILE, FINE PITCH | |
Qualification Status | Not Qualified | |
Refresh Cycles | 4096 | |
Seated Height-Max | 1.4 mm | |
Self Refresh | YES | |
Sequential Burst Length | 2,4,8,FP | |
Standby Current-Max | 0.055 A | |
Supply Current-Max | 0.76 mA | |
Supply Voltage-Max (Vsup) | 2.625 V | |
Supply Voltage-Min (Vsup) | 2.375 V | |
Supply Voltage-Nom (Vsup) | 2.5 V | |
Surface Mount | YES | |
Technology | CMOS | |
Terminal Finish | TIN LEAD | |
Terminal Form | BALL | |
Terminal Pitch | 0.8 mm | |
Terminal Position | BOTTOM | |
Width | 12 mm |
Alternate Parts for K4D26323AA-GL40
This table gives cross-reference parts and alternative options found for K4D26323AA-GL40. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4D26323AA-GL40, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
K4D263238E-GC360 | DDR DRAM, 4MX32, 0.6ns, CMOS, PBGA144, FBGA-144 | Samsung Semiconductor | K4D26323AA-GL40 vs K4D263238E-GC360 |
K4D263238A-GC33 | DDR DRAM, 4MX32, 0.6ns, CMOS, PBGA144, FBGA-144 | Samsung Semiconductor | K4D26323AA-GL40 vs K4D263238A-GC33 |
NT5DS4M32EF-33 | DDR DRAM, 4MX32, 0.6ns, CMOS, PBGA144, FBGA-144 | Nanya Technology Corporation | K4D26323AA-GL40 vs NT5DS4M32EF-33 |
HY5DW283222AF-33 | DDR DRAM, 4MX32, 0.6ns, CMOS, PBGA144, 12 X 12 MM, 0.80 MM PITCH, FBGA-144 | SK Hynix Inc | K4D26323AA-GL40 vs HY5DW283222AF-33 |
K4D263238G-GC360 | DDR DRAM, 4MX32, 0.6ns, CMOS, PBGA144, FBGA-144 | Samsung Semiconductor | K4D26323AA-GL40 vs K4D263238G-GC360 |
K4D263238A-GC40 | DDR DRAM, 4MX32, 0.6ns, CMOS, PBGA144, FBGA-144 | Samsung Semiconductor | K4D26323AA-GL40 vs K4D263238A-GC40 |
K4D263238I-GC400 | DDR DRAM, 4MX32, 0.6ns, CMOS, PBGA144, FBGA-144 | Samsung Semiconductor | K4D26323AA-GL40 vs K4D263238I-GC400 |
NT5DS4M32EG-28 | DDR DRAM, 4MX32, 0.6ns, CMOS, PBGA144, LEAD FREE, FBGA-144 | Nanya Technology Corporation | K4D26323AA-GL40 vs NT5DS4M32EG-28 |
K4D26323AA-GL400 | DDR DRAM, 4MX32, 0.6ns, CMOS, PBGA144, FBGA-144 | Samsung Semiconductor | K4D26323AA-GL40 vs K4D26323AA-GL400 |
NT5DS4M32EG-4 | DDR DRAM, 4MX32, 0.6ns, CMOS, PBGA144, LEAD FREE, FBGA-144 | Nanya Technology Corporation | K4D26323AA-GL40 vs NT5DS4M32EG-4 |