Part Details for K4D263238E-GC360 by Samsung Semiconductor
Overview of K4D263238E-GC360 by Samsung Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Computing and Data Storage
Part Details for K4D263238E-GC360
K4D263238E-GC360 CAD Models
K4D263238E-GC360 Part Data Attributes
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K4D263238E-GC360
Samsung Semiconductor
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Datasheet
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K4D263238E-GC360
Samsung Semiconductor
DDR DRAM, 4MX32, 0.6ns, CMOS, PBGA144, FBGA-144
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
| Part Package Code | BGA | |
| Package Description | LFBGA, | |
| Pin Count | 144 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.02 | |
| Access Mode | FOUR BANK PAGE BURST | |
| Access Time-Max | 0.6 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| JESD-30 Code | S-PBGA-B144 | |
| Length | 12 mm | |
| Memory Density | 134217728 bit | |
| Memory IC Type | DDR DRAM | |
| Memory Width | 32 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 144 | |
| Number of Words | 4194304 words | |
| Number of Words Code | 4000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 65 °C | |
| Operating Temperature-Min | ||
| Organization | 4MX32 | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | LFBGA | |
| Package Shape | SQUARE | |
| Package Style | GRID ARRAY, LOW PROFILE, FINE PITCH | |
| Qualification Status | Not Qualified | |
| Seated Height-Max | 1.4 mm | |
| Self Refresh | YES | |
| Supply Voltage-Max (Vsup) | 2.94 V | |
| Supply Voltage-Min (Vsup) | 2.375 V | |
| Supply Voltage-Nom (Vsup) | 2.5 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Form | BALL | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | BOTTOM | |
| Width | 12 mm |
Alternate Parts for K4D263238E-GC360
This table gives cross-reference parts and alternative options found for K4D263238E-GC360. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4D263238E-GC360, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| K4D263238G-GC360 | DDR DRAM, 4MX32, 0.6ns, CMOS, PBGA144, FBGA-144 | Samsung Semiconductor | K4D263238E-GC360 vs K4D263238G-GC360 |
| NT5DS4M32EF-4 | DDR DRAM, 4MX32, 0.6ns, CMOS, PBGA144, FBGA-144 | Nanya Technology Corporation | K4D263238E-GC360 vs NT5DS4M32EF-4 |
| MT46V4M32V1FK-33 | DDR DRAM, 4MX32, 0.6ns, CMOS, PBGA144, 12 X 12 MM, PLASTIC, FBGA-144 | Micron Technology Inc | K4D263238E-GC360 vs MT46V4M32V1FK-33 |
| K4D263238E-VC360 | DDR DRAM, 4MX32, 0.6ns, CMOS, PBGA144, LEAD FREE, FBGA-144 | Samsung Semiconductor | K4D263238E-GC360 vs K4D263238E-VC360 |
| K4D263238A-GC33 | DDR DRAM, 4MX32, 0.6ns, CMOS, PBGA144, FBGA-144 | Samsung Semiconductor | K4D263238E-GC360 vs K4D263238A-GC33 |
| NT5DS4M32EF-25 | DDR DRAM, 4MX32, 0.6ns, CMOS, PBGA144, FBGA-144 | Nanya Technology Corporation | K4D263238E-GC360 vs NT5DS4M32EF-25 |
| K4D263238E-GC400 | DDR DRAM, 4MX32, 0.6ns, CMOS, PBGA144, FBGA-144 | Samsung Semiconductor | K4D263238E-GC360 vs K4D263238E-GC400 |
| K4D263238I-VC400 | DDR DRAM, 4MX32, 0.6ns, CMOS, PBGA144, LEAD FREE, FBGA-144 | Samsung Semiconductor | K4D263238E-GC360 vs K4D263238I-VC400 |
| NT5DS4M32EG-25 | DDR DRAM, 4MX32, 0.6ns, CMOS, PBGA144, LEAD FREE, FBGA-144 | Nanya Technology Corporation | K4D263238E-GC360 vs NT5DS4M32EG-25 |
| K4D263238E-VC400 | DDR DRAM, 4MX32, 0.6ns, CMOS, PBGA144, LEAD FREE, FBGA-144 | Samsung Semiconductor | K4D263238E-GC360 vs K4D263238E-VC400 |