Datasheets
JANTXV2N7225 by:

Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3

Part Details for JANTXV2N7225 by Semicoa Semiconductors

Overview of JANTXV2N7225 by Semicoa Semiconductors

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Applications Industrial Automation

Part Details for JANTXV2N7225

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JANTXV2N7225 Part Data Attributes

JANTXV2N7225 Semicoa Semiconductors
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JANTXV2N7225 Semicoa Semiconductors Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3
Part Life Cycle Code Contact Manufacturer
Ihs Manufacturer SEMICOA CORP
Package Description HERMETIC SEALED PACKAGE-3
Reach Compliance Code unknown
ECCN Code EAR99
Avalanche Energy Rating (Eas) 500 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 27.4 A
Drain-source On Resistance-Max 0.105 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-254AA
JESD-30 Code S-XSFM-P3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material UNSPECIFIED
Package Shape SQUARE
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 110 A
Qualification Status Not Qualified
Reference Standard MIL-19500
Surface Mount NO
Terminal Form PIN/PEG
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for JANTXV2N7225

This table gives cross-reference parts and alternative options found for JANTXV2N7225. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JANTXV2N7225, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRFM250 27.4A, 200V, 0.105ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA, HERMETIC SEALED, METAL, ISOLATED TO-254AA, 3 PIN TT Electronics Power and Hybrid / Semelab Limited JANTXV2N7225 vs IRFM250
JANTXV2N7225 Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254AA, 3 PIN Infineon Technologies AG JANTXV2N7225 vs JANTXV2N7225
IRFM250 Power Field-Effect Transistor, 28A I(D), 200V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3 Temic Semiconductors JANTXV2N7225 vs IRFM250
JANTXV2N7225 Power Field-Effect Transistor, 27.4A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254AA, 3 PIN Voltage Multipliers Inc JANTXV2N7225 vs JANTXV2N7225
2N7225R1 27.4A, 200V, 0.105ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA, HERMETIC SEALED, METAL, ISOLATED TO-254AA, 3 PIN TT Electronics Power and Hybrid / Semelab Limited JANTXV2N7225 vs 2N7225R1
2N7225 27.4A, 200V, 0.105ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA, HERMETIC SEALED, METAL, ISOLATED TO-254AA, 3 PIN TT Electronics Power and Hybrid / Semelab Limited JANTXV2N7225 vs 2N7225
2N7225 Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, CERAMIC PACKAGE-3 Microsemi Corporation JANTXV2N7225 vs 2N7225
JANTX2N7225 Power Field-Effect Transistor, 27.4A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254AA, 3 PIN Voltage Multipliers Inc JANTXV2N7225 vs JANTX2N7225
NESM250 Power Field-Effect Transistor, 27A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254Z, 3 PIN Microsemi Corporation JANTXV2N7225 vs NESM250
IRFM250R1 Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, METAL, ISOLATED TO-254AA, 3 PIN TT Electronics Resistors JANTXV2N7225 vs IRFM250R1
Part Number Description Manufacturer Compare
2N7219 Power Field-Effect Transistor, 18A I(D), 200V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254AA, 3 PIN Infineon Technologies AG JANTXV2N7225 vs 2N7219
JANTX2N7225 Power Field-Effect Transistor, 27.4A I(D), 200V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA Harris Semiconductor JANTXV2N7225 vs JANTX2N7225
IRFM250 Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, Infineon Technologies AG JANTXV2N7225 vs IRFM250
2N7219U Power Field-Effect Transistor, 18A I(D), 200V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA International Rectifier JANTXV2N7225 vs 2N7219U
IRFM240 18A, 200V, 0.25ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA, HERMETIC SEALED, METAL PACKAGE-3 TT Electronics Power and Hybrid / Semelab Limited JANTXV2N7225 vs IRFM240
STFM240TP Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254, 3 PIN Microsemi Corporation JANTXV2N7225 vs STFM240TP
IRFN240 Power Field-Effect Transistor, 13.9A I(D), 200V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, TO-220SM, 3 PIN TT Electronics Resistors JANTXV2N7225 vs IRFN240
IRFN250 22A, 200V, 0.105ohm, N-CHANNEL, Si, POWER, MOSFET TT Electronics Power and Hybrid / Semelab Limited JANTXV2N7225 vs IRFN250
STFM240VX Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254, 3 PIN Microsemi Corporation JANTXV2N7225 vs STFM240VX
IRFM240-QR-B Power Field-Effect Transistor, 18A I(D), 200V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, METAL PACKAGE-3 TT Electronics Resistors JANTXV2N7225 vs IRFM240-QR-B

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