Datasheets
IXTT10N100D2 by:

Power Field-Effect Transistor,

Part Details for IXTT10N100D2 by Littelfuse Inc

Overview of IXTT10N100D2 by Littelfuse Inc

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Applications Automotive

Price & Stock for IXTT10N100D2

Part # Distributor Description Stock Price Buy
DISTI # 03AH1806
Newark Discmosfet N-Ch Depl Mode-D2 To-268Aa/ Tube |Littelfuse IXTT10N100D2 Min Qty: 300 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 250 $14.3100
  • 500 $13.3000
$13.3000 / $14.3100 Buy Now
DISTI # IXTT10N100D2-ND
DigiKey MOSFET N-CH 1000V 10A TO268 Min Qty: 300 Lead time: 57 Weeks Container: Tube Temporarily Out of Stock
  • 300 $14.3498
$14.3498 Buy Now

Part Details for IXTT10N100D2

IXTT10N100D2 Part Data Attributes:

IXTT10N100D2 Littelfuse Inc
Buy Now Datasheet
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IXTT10N100D2 Littelfuse Inc Power Field-Effect Transistor,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer LITTELFUSE INC
Package Description ,
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer LITTELFUSE
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
Drain Current-Max (ID) 10 A
Drain-source On Resistance-Max 1.5 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 70 pF
JEDEC-95 Code TO-268AA
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode DEPLETION MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 695 W
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 10
Transistor Application AMPLIFIER
Transistor Element Material SILICON

Alternate Parts for IXTT10N100D2

This table gives cross-reference parts and alternative options found for IXTT10N100D2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXTT10N100D2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IXTT10N100D2 Power Field-Effect Transistor, 10A I(D), 1000V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN IXYS Corporation IXTT10N100D2 vs IXTT10N100D2
IXTT10N100D Power Field-Effect Transistor, Littelfuse Inc IXTT10N100D2 vs IXTT10N100D
Part Number Description Manufacturer Compare
IXFV10N100PS Power Field-Effect Transistor, 10A I(D), 1000V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS220SMD, 3 PIN IXYS Corporation IXTT10N100D2 vs IXFV10N100PS
IXTT10N100D Power Field-Effect Transistor, Littelfuse Inc IXTT10N100D2 vs IXTT10N100D
APT9M100S Power Field-Effect Transistor, 9A I(D), 1000V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Microchip Technology Inc IXTT10N100D2 vs APT9M100S
IXTH10N100D Power Field-Effect Transistor, 10A I(D), 1000V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, PLASTIC PACKAGE-3 IXYS Corporation IXTT10N100D2 vs IXTH10N100D
APT9M100B Power Field-Effect Transistor, 9A I(D), 1000V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, ROHS COMPLIANT, TO-247, 3 PIN Microsemi Corporation IXTT10N100D2 vs APT9M100B
IXTH10N100D2 Power Field-Effect Transistor, 10A I(D), 1000V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, PLASTIC PACKAGE-3 IXYS Corporation IXTT10N100D2 vs IXTH10N100D2
IXTT10N100D2 Power Field-Effect Transistor, 10A I(D), 1000V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN IXYS Corporation IXTT10N100D2 vs IXTT10N100D2
IXTH10N100D2 Power Field-Effect Transistor, Littelfuse Inc IXTT10N100D2 vs IXTH10N100D2
APT9F100B Power Field-Effect Transistor, 9A I(D), 1000V, 1.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, ROHS COMPLIANT, TO-247, 3 PIN Microsemi Corporation IXTT10N100D2 vs APT9F100B
APT9F100B Power Field-Effect Transistor, 9A I(D), 1000V, 1.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD Microchip Technology Inc IXTT10N100D2 vs APT9F100B

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