Part Details for IXTP1N80P by Littelfuse Inc
Overview of IXTP1N80P by Littelfuse Inc
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (6 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IXTP1N80P
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
03AH1618
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Newark | Disc Mosfet N-Ch Std-Polar To-220Ab/Fp/ Tube |Littelfuse IXTP1N80P RoHS: Not Compliant Min Qty: 300 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$1.4300 / $2.0400 | Buy Now |
DISTI #
IXTP1N80P-ND
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DigiKey | MOSFET N-CH 800V 1A TO220AB Min Qty: 300 Lead time: 57 Weeks Container: Tube | Temporarily Out of Stock |
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$1.7896 | Buy Now |
Part Details for IXTP1N80P
IXTP1N80P CAD Models
IXTP1N80P Part Data Attributes
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IXTP1N80P
Littelfuse Inc
Buy Now
Datasheet
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IXTP1N80P
Littelfuse Inc
Power Field-Effect Transistor, 1A I(D), 800V, 14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | LITTELFUSE INC | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | LITTELFUSE | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 75 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 800 V | |
Drain Current-Max (ID) | 1 A | |
Drain-source On Resistance-Max | 14 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 5.3 pF | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 42 W | |
Pulsed Drain Current-Max (IDM) | 2 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IXTP1N80P
This table gives cross-reference parts and alternative options found for IXTP1N80P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXTP1N80P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IXTA1N80P | Power Field-Effect Transistor, 1A I(D), 800V, 14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | Littelfuse Inc | IXTP1N80P vs IXTA1N80P |
IXTU1N80P | Power Field-Effect Transistor, 1A I(D), 800V, 14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, PLASTIC PACKAGE-3 | Littelfuse Inc | IXTP1N80P vs IXTU1N80P |
IXTY1N80P | Power Field-Effect Transistor, 1A I(D), 800V, 14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, PLASTIC PACKAGE-3 | Littelfuse Inc | IXTP1N80P vs IXTY1N80P |
IXTA1N80P | Power Field-Effect Transistor, 1A I(D), 800V, 14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | IXYS Corporation | IXTP1N80P vs IXTA1N80P |
IXTY1N80P | Power Field-Effect Transistor, 1A I(D), 800V, 14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, PLASTIC PACKAGE-3 | IXYS Corporation | IXTP1N80P vs IXTY1N80P |
IXTU1N80P | Power Field-Effect Transistor, 1A I(D), 800V, 14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, PLASTIC PACKAGE-3 | IXYS Corporation | IXTP1N80P vs IXTU1N80P |