Part Details for IXTY1N80P by Littelfuse Inc
Overview of IXTY1N80P by Littelfuse Inc
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (6 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Medical Imaging
Automotive
Robotics and Drones
Price & Stock for IXTY1N80P
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
03AH1909
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Newark | Disc Mosfet N-Ch Std-Polar To-252D/ Tube |Littelfuse IXTY1N80P RoHS: Not Compliant Min Qty: 350 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$1.2900 / $1.8300 | Buy Now |
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DISTI #
IXTY1N80P-ND
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DigiKey | MOSFET N-CH 800V 1A TO252 Min Qty: 350 Lead time: 57 Weeks Container: Tube | Temporarily Out of Stock |
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$1.8002 | Buy Now |
Part Details for IXTY1N80P
IXTY1N80P CAD Models
IXTY1N80P Part Data Attributes
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IXTY1N80P
Littelfuse Inc
Buy Now
Datasheet
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Compare Parts:
IXTY1N80P
Littelfuse Inc
Power Field-Effect Transistor, 1A I(D), 800V, 14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, PLASTIC PACKAGE-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | LITTELFUSE INC | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | LITTELFUSE | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 75 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 800 V | |
| Drain Current-Max (ID) | 1 A | |
| Drain-source On Resistance-Max | 14 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 5.3 pF | |
| JEDEC-95 Code | TO-252AA | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 42 W | |
| Pulsed Drain Current-Max (IDM) | 2 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IXTY1N80P
This table gives cross-reference parts and alternative options found for IXTY1N80P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXTY1N80P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IXTP1N80P | Power Field-Effect Transistor, 1A I(D), 800V, 14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Littelfuse Inc | IXTY1N80P vs IXTP1N80P |
| IXTA1N80P | Power Field-Effect Transistor, 1A I(D), 800V, 14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | Littelfuse Inc | IXTY1N80P vs IXTA1N80P |
| IXTU1N80P | Power Field-Effect Transistor, 1A I(D), 800V, 14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, PLASTIC PACKAGE-3 | Littelfuse Inc | IXTY1N80P vs IXTU1N80P |
| IXTA1N80P | Power Field-Effect Transistor, 1A I(D), 800V, 14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | IXYS Corporation | IXTY1N80P vs IXTA1N80P |
| IXTY1N80P | Power Field-Effect Transistor, 1A I(D), 800V, 14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, PLASTIC PACKAGE-3 | IXYS Corporation | IXTY1N80P vs IXTY1N80P |
| IXTU1N80P | Power Field-Effect Transistor, 1A I(D), 800V, 14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, PLASTIC PACKAGE-3 | IXYS Corporation | IXTY1N80P vs IXTU1N80P |