Part Details for IXTA52P10P by Littelfuse Inc
Overview of IXTA52P10P by Littelfuse Inc
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for IXTA52P10P
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
03AH1396
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Newark | Mosfet, P-Ch, 100V, 52A, To-263Aa, Channel Type:P Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:52A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Littelfuse IXTA52P10P Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 0 |
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$3.4500 / $6.4900 | Buy Now |
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DISTI #
IXTA52P10P-ND
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DigiKey | MOSFET P-CH 100V 52A TO263 Min Qty: 1 Lead time: 24 Weeks Container: Tube |
2056 In Stock |
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$3.5193 / $6.6200 | Buy Now |
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DISTI #
E02:0323_07043569
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Arrow Electronics | Trans MOSFET P-CH 100V 52A 3-Pin(2+Tab) D2PAK Min Qty: 1 Package Multiple: 1 Lead time: 40 Weeks Date Code: 2349 | Europe - 300 |
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$4.1966 | Buy Now |
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DISTI #
84348097
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Verical | Trans MOSFET P-CH 100V 52A 3-Pin(2+Tab) D2PAK Min Qty: 2 Package Multiple: 1 Date Code: 2349 | Americas - 300 |
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$6.6971 | Buy Now |
Part Details for IXTA52P10P
IXTA52P10P CAD Models
IXTA52P10P Part Data Attributes
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IXTA52P10P
Littelfuse Inc
Buy Now
Datasheet
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Compare Parts:
IXTA52P10P
Littelfuse Inc
Power Field-Effect Transistor,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | LITTELFUSE INC | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | LITTELFUSE | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 1000 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 52 A | |
| Drain-source On Resistance-Max | 0.05 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 275 pF | |
| JEDEC-95 Code | TO-263AA | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 300 W | |
| Pulsed Drain Current-Max (IDM) | 130 A | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IXTA52P10P
This table gives cross-reference parts and alternative options found for IXTA52P10P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXTA52P10P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF5210HR | Power Field-Effect Transistor, 40A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | International Rectifier | IXTA52P10P vs IRF5210HR |
| IXTH36P10 | Power Field-Effect Transistor, | Littelfuse Inc | IXTA52P10P vs IXTH36P10 |
| IRF5210STRL | Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 | International Rectifier | IXTA52P10P vs IRF5210STRL |
| AUIRF5210S | Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3/2 | Infineon Technologies AG | IXTA52P10P vs AUIRF5210S |
| IRF5210L | Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN | Infineon Technologies AG | IXTA52P10P vs IRF5210L |
| AUIRF5210STRL | Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3/2 | Infineon Technologies AG | IXTA52P10P vs AUIRF5210STRL |
| IRF5210SHR | Power Field-Effect Transistor, 40A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 | International Rectifier | IXTA52P10P vs IRF5210SHR |
| SHD225452S | Power Field-Effect Transistor, 34A I(D), 100V, 0.07ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254, 3 PIN | Sensitron Semiconductors | IXTA52P10P vs SHD225452S |
| IRF5210 | 40A, 100V, 0.07ohm, P-CHANNEL, Si, POWER, MOSFET, TO-3 | TT Electronics Power and Hybrid / Semelab Limited | IXTA52P10P vs IRF5210 |
| IRF5210STRLHR | Power Field-Effect Transistor, 40A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 | International Rectifier | IXTA52P10P vs IRF5210STRLHR |