Datasheets
IXTA180N10T7 by:

Power Field-Effect Transistor, 180A I(D), 100V, 0.0064ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, TO-263, 6 PIN

Part Details for IXTA180N10T7 by IXYS Corporation

Overview of IXTA180N10T7 by IXYS Corporation

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Price & Stock for IXTA180N10T7

Part # Distributor Description Stock Price Buy
DISTI # 747-IXTA180N10T7
Mouser Electronics MOSFET 180 Amps 100V 6.1 Rds 0
  • 300 $3.8300
$3.8300 Order Now
Future Electronics Single N-Channel 100 V 6.4 mOhm 480 W Power Mosfet - TO-263 RoHS: Compliant pbFree: Yes Min Qty: 300 Package Multiple: 50 Container: Tube 0
Tube
  • 50 $3.5300
  • 150 $3.4400
  • 250 $3.4000
  • 750 $3.3100
  • 1,250 $3.2300
$3.2300 / $3.5300 Buy Now
DISTI # IXTA180N10T7
TTI MOSFET 180 Amps 100V 6.1 Rds Min Qty: 300 Package Multiple: 50 Container: Tube Americas - 0
  • 300 $3.4300
  • 500 $3.3600
  • 1,000 $3.3000
  • 2,500 $3.2300
$3.2300 / $3.4300 Buy Now
New Advantage Corporation MOSFET DIS.180A 100V N-CH TO263-7 TRENCHMV SMT RoHS: Compliant Min Qty: 1 Package Multiple: 1 46
  • 46 $7.1200
$7.1200 Buy Now

Part Details for IXTA180N10T7

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IXTA180N10T7 Part Data Attributes:

IXTA180N10T7 IXYS Corporation
Buy Now Datasheet
Compare Parts:
IXTA180N10T7 IXYS Corporation Power Field-Effect Transistor, 180A I(D), 100V, 0.0064ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, TO-263, 6 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer IXYS CORP
Part Package Code D2PAK
Package Description TO-263, 6 PIN
Pin Count 4
Reach Compliance Code not_compliant
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 750 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 180 A
Drain-source On Resistance-Max 0.0064 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263
JESD-30 Code R-PSFM-G6
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 450 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 10
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IXTA180N10T7

This table gives cross-reference parts and alternative options found for IXTA180N10T7. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXTA180N10T7, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IXTA180N10T7 Power Field-Effect Transistor, Littelfuse Inc IXTA180N10T7 vs IXTA180N10T7
IXTH180N10T Power Field-Effect Transistor, 180A I(D), 100V, 0.0064ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN IXYS Corporation IXTA180N10T7 vs IXTH180N10T
IXTQ180N10T Power Field-Effect Transistor, Littelfuse Inc IXTA180N10T7 vs IXTQ180N10T
IXTA180N10T Power Field-Effect Transistor, 180A I(D), 100V, 0.0064ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN IXYS Corporation IXTA180N10T7 vs IXTA180N10T
IXTA180N10T Power Field-Effect Transistor, Littelfuse Inc IXTA180N10T7 vs IXTA180N10T
IXTH180N10T Power Field-Effect Transistor, Littelfuse Inc IXTA180N10T7 vs IXTH180N10T

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