Transistors
IXTH180N10T
Description: Power Field-Effect Transistor, 180A I(D), 100V, 0.0064ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN

Overview of IXTH180N10T by IXYS Corporation

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for IXTH180N10T by IXYS Corporation

Part # Manufacturer Description Stock Price Buy
DISTI # 747-IXTH180N10T
Mouser Electronics MOSFETs 180 Amps 100V 6.1 Rds RoHS: Compliant 630
  • 1 $7.1600
  • 10 $6.3200
  • 30 $5.5700
  • 120 $5.1100
  • 270 $4.8900
  • 510 $4.5100
  • 1,020 $3.8000
$3.8000 / $7.1600 Buy Now
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 30 Package Multiple: 30 Container: Tube 0
Tube
  • 30 $4.3600
$4.3600 Buy Now
DISTI # IXTH180N10T
TTI MOSFETs 180 Amps 100V 6.1 Rds Min Qty: 300 Package Multiple: 30 Container: Tube Americas - 0
  • 300 $4.8400
  • 510 $4.4600
  • 1,020 $3.7600
$3.7600 / $4.8400 Buy Now
New Advantage Corporation MOSFET DIS.180A 100V N-CH TO-247AD TRENCHMV RoHS: Compliant Min Qty: 1 Package Multiple: 100 136
  • 100 $9.7500
  • 136 $9.1000
$9.1000 / $9.7500 Buy Now

CAD Models for IXTH180N10T by IXYS Corporation
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Part Data Attributes for IXTH180N10T by IXYS Corporation

IXTH180N10T
IXYS Corporation
-
-
Pbfree Code
Yes
Rohs Code
Yes
Part Life Cycle Code
Transferred
Ihs Manufacturer
IXYS CORP
Part Package Code
TO-247AD
Package Description
TO-247AD, 3 PIN
Pin Count
3
Reach Compliance Code
compliant
ECCN Code
EAR99
Additional Feature
AVALANCHE RATED
Avalanche Energy Rating (Eas)
750 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
100 V
Drain Current-Max (ID)
180 A
Drain-source On Resistance-Max
0.0064 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-247AD
JESD-30 Code
R-PSFM-T3
JESD-609 Code
e3
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Peak Reflow Temperature (Cel)
260
Polarity/Channel Type
N-CHANNEL
Pulsed Drain Current-Max (IDM)
450 A
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Finish
Matte Tin (Sn)
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Time@Peak Reflow Temperature-Max (s)
10
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Want to compare parts?
  1. IXTH180N10T
    IXYS Corporation
    Power Field-Effect Transistor, 180A I(D), 100V, 0.0064ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN
    VS

Alternate Parts for IXTH180N10T

This table gives cross-reference parts and alternative options found for IXTH180N10T. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXTH180N10T, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IXTH180N10T Power Field-Effect Transistor, Littelfuse Inc IXTH180N10T vs IXTH180N10T
IXTQ180N10T Power Field-Effect Transistor, 180A I(D), 100V, 0.0064ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN IXYS Corporation IXTH180N10T vs IXTQ180N10T
IXTA180N10T7 Power Field-Effect Transistor, 180A I(D), 100V, 0.0064ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, TO-263, 6 PIN IXYS Corporation IXTH180N10T vs IXTA180N10T7
IXTP180N10T Power Field-Effect Transistor, Littelfuse Inc IXTH180N10T vs IXTP180N10T
IXTA180N10T Power Field-Effect Transistor, Littelfuse Inc IXTH180N10T vs IXTA180N10T
IXTA180N10T7 Power Field-Effect Transistor, Littelfuse Inc IXTH180N10T vs IXTA180N10T7

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