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Overview of IXSH20N60AU1 by IXYS Corporation
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Energy and Power Systems
Medical Imaging
Robotics and Drones
CAD Models for IXSH20N60AU1 by IXYS Corporation
Part Data Attributes for IXSH20N60AU1 by IXYS Corporation
|
|
---|---|
Part Life Cycle Code
|
Obsolete
|
Ihs Manufacturer
|
IXYS CORP
|
Package Description
|
FLANGE MOUNT, R-PSFM-T3
|
Reach Compliance Code
|
unknown
|
ECCN Code
|
EAR99
|
HTS Code
|
8541.29.00.95
|
Additional Feature
|
HIGH SPEED
|
Case Connection
|
COLLECTOR
|
Collector Current-Max (IC)
|
40 A
|
Collector-Emitter Voltage-Max
|
600 V
|
Configuration
|
SINGLE WITH BUILT-IN DIODE
|
Gate-Emitter Thr Voltage-Max
|
6.5 V
|
Gate-Emitter Voltage-Max
|
20 V
|
JEDEC-95 Code
|
TO-247AD
|
JESD-30 Code
|
R-PSFM-T3
|
Number of Elements
|
1
|
Number of Terminals
|
3
|
Operating Temperature-Max
|
150 °C
|
Package Body Material
|
PLASTIC/EPOXY
|
Package Shape
|
RECTANGULAR
|
Package Style
|
FLANGE MOUNT
|
Polarity/Channel Type
|
N-CHANNEL
|
Power Dissipation Ambient-Max
|
150 W
|
Power Dissipation-Max (Abs)
|
150 W
|
Qualification Status
|
Not Qualified
|
Surface Mount
|
NO
|
Terminal Form
|
THROUGH-HOLE
|
Terminal Position
|
SINGLE
|
Transistor Application
|
MOTOR CONTROL
|
Transistor Element Material
|
SILICON
|
Turn-off Time-Nom (toff)
|
800 ns
|
Turn-on Time-Nom (ton)
|
300 ns
|
VCEsat-Max
|
3 V
|
Alternate Parts for IXSH20N60AU1
This table gives cross-reference parts and alternative options found for IXSH20N60AU1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXSH20N60AU1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
GT15H101 | TRANSISTOR 15 A, 500 V, N-CHANNEL IGBT, 2-16C1C, 3 PIN, Insulated Gate BIP Transistor | Toshiba America Electronic Components | IXSH20N60AU1 vs GT15H101 |
IRGBC30FD2 | Insulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN | International Rectifier | IXSH20N60AU1 vs IRGBC30FD2 |
SGH20N60RUFD | Insulated Gate Bipolar Transistor, 32A I(C), 600V V(BR)CES, N-Channel, TO-3P, 3 PIN | Samsung Semiconductor | IXSH20N60AU1 vs SGH20N60RUFD |
IRGPC50S | Insulated Gate Bipolar Transistor, 70A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-247AC, 3 PIN | International Rectifier | IXSH20N60AU1 vs IRGPC50S |
IXGH28N60BD1 | Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN | IXYS Corporation | IXSH20N60AU1 vs IXGH28N60BD1 |
IRGPC40F | Insulated Gate Bipolar Transistor, 49A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-3P, 3 PIN | International Rectifier | IXSH20N60AU1 vs IRGPC40F |
HGTG30N60C3D_NL | Insulated Gate Bipolar Transistor, 63A I(C), 600V V(BR)CES, N-Channel, TO-247 | Fairchild Semiconductor Corporation | IXSH20N60AU1 vs HGTG30N60C3D_NL |
IXGH28N60B | Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN | IXYS Corporation | IXSH20N60AU1 vs IXGH28N60B |
IXSH24N60BD1 | Insulated Gate Bipolar Transistor, 48A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247, 3 PIN | IXYS Corporation | IXSH20N60AU1 vs IXSH24N60BD1 |
IXGH28N60B3D1 | Insulated Gate Bipolar Transistor, | Littelfuse Inc | IXSH20N60AU1 vs IXGH28N60B3D1 |