IXSH20N60AU1
IXYS Corporation
Description: Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-247AD

Overview of IXSH20N60AU1 by IXYS Corporation

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
  • Distributor Offerings: ( 0 listings )
  • Number of FFF Equivalents: ( 0 replacements )
  • CAD Models: ( Request Part )
  • Number of Functional Equivalents: ( 10 options )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )
Where used in Applications: Energy and Power Systems Medical Imaging Robotics and Drones

CAD Models for IXSH20N60AU1 by IXYS Corporation
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Part Data Attributes for IXSH20N60AU1 by IXYS Corporation

IXSH20N60AU1
IXYS Corporation
-
-
Part Life Cycle Code
Obsolete
Ihs Manufacturer
IXYS CORP
Package Description
FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code
unknown
ECCN Code
EAR99
HTS Code
8541.29.00.95
Additional Feature
HIGH SPEED
Case Connection
COLLECTOR
Collector Current-Max (IC)
40 A
Collector-Emitter Voltage-Max
600 V
Configuration
SINGLE WITH BUILT-IN DIODE
Gate-Emitter Thr Voltage-Max
6.5 V
Gate-Emitter Voltage-Max
20 V
JEDEC-95 Code
TO-247AD
JESD-30 Code
R-PSFM-T3
Number of Elements
1
Number of Terminals
3
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
Power Dissipation Ambient-Max
150 W
Power Dissipation-Max (Abs)
150 W
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Transistor Application
MOTOR CONTROL
Transistor Element Material
SILICON
Turn-off Time-Nom (toff)
800 ns
Turn-on Time-Nom (ton)
300 ns
VCEsat-Max
3 V
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  1. IXSH20N60AU1
    IXYS Corporation
    Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-247AD
    VS

Alternate Parts for IXSH20N60AU1

This table gives cross-reference parts and alternative options found for IXSH20N60AU1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXSH20N60AU1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
GT15H101 TRANSISTOR 15 A, 500 V, N-CHANNEL IGBT, 2-16C1C, 3 PIN, Insulated Gate BIP Transistor Toshiba America Electronic Components IXSH20N60AU1 vs GT15H101
IRGBC30FD2 Insulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN International Rectifier IXSH20N60AU1 vs IRGBC30FD2
SGH20N60RUFD Insulated Gate Bipolar Transistor, 32A I(C), 600V V(BR)CES, N-Channel, TO-3P, 3 PIN Samsung Semiconductor IXSH20N60AU1 vs SGH20N60RUFD
IRGPC50S Insulated Gate Bipolar Transistor, 70A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-247AC, 3 PIN International Rectifier IXSH20N60AU1 vs IRGPC50S
IXGH28N60BD1 Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN IXYS Corporation IXSH20N60AU1 vs IXGH28N60BD1
IRGPC40F Insulated Gate Bipolar Transistor, 49A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-3P, 3 PIN International Rectifier IXSH20N60AU1 vs IRGPC40F
HGTG30N60C3D_NL Insulated Gate Bipolar Transistor, 63A I(C), 600V V(BR)CES, N-Channel, TO-247 Fairchild Semiconductor Corporation IXSH20N60AU1 vs HGTG30N60C3D_NL
IXGH28N60B Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN IXYS Corporation IXSH20N60AU1 vs IXGH28N60B
IXSH24N60BD1 Insulated Gate Bipolar Transistor, 48A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247, 3 PIN IXYS Corporation IXSH20N60AU1 vs IXSH24N60BD1
IXGH28N60B3D1 Insulated Gate Bipolar Transistor, Littelfuse Inc IXSH20N60AU1 vs IXGH28N60B3D1

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