Datasheets
IXFR55N50 by:

Power Field-Effect Transistor, 48A I(D), 500V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS247, 3 PIN

Part Details for IXFR55N50 by IXYS Corporation

Overview of IXFR55N50 by IXYS Corporation

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Applications Space Technology Aerospace and Defense Energy and Power Systems

Price & Stock for IXFR55N50

Part # Distributor Description Stock Price Buy
DISTI # 747-IXFR55N50
Mouser Electronics MOSFET 48 Amps 500V 0.08 Rds RoHS: Compliant 0
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Part Details for IXFR55N50

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IXFR55N50 Part Data Attributes:

IXFR55N50 IXYS Corporation
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IXFR55N50 IXYS Corporation Power Field-Effect Transistor, 48A I(D), 500V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS247, 3 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer IXYS CORP
Package Description ISOPLUS247, 3 PIN
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 3000 mJ
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V
Drain Current-Max (ID) 48 A
Drain-source On Resistance-Max 0.09 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSIP-T3
JESD-609 Code e1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 400 W
Pulsed Drain Current-Max (IDM) 220 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN SILVER COPPER
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IXFR55N50

This table gives cross-reference parts and alternative options found for IXFR55N50. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFR55N50, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IXFR55N50F Power Field-Effect Transistor, 47A I(D), 500V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS247, 3 PIN IXYS Corporation IXFR55N50 vs IXFR55N50F
Part Number Description Manufacturer Compare
APT51M50J Power Field-Effect Transistor, 51A I(D), 500V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Microchip Technology Inc IXFR55N50 vs APT51M50J
STE50NM50 50A, 500V, 0.085ohm, N-CHANNEL, Si, POWER, MOSFET, ISOTOP-4 STMicroelectronics IXFR55N50 vs STE50NM50
APT51F50J Power Field-Effect Transistor, 51A I(D), 500V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Microchip Technology Inc IXFR55N50 vs APT51F50J
APT50M80JFLC Power Field-Effect Transistor, 52A I(D), 500V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4 Advanced Power Technology IXFR55N50 vs APT50M80JFLC
IXFR55N50F Power Field-Effect Transistor, 47A I(D), 500V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS247, 3 PIN IXYS Corporation IXFR55N50 vs IXFR55N50F
APT51F50J Power Field-Effect Transistor, 51A I(D), 500V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOTOP-4 Microsemi Corporation IXFR55N50 vs APT51F50J
APT50M80JLC 52A, 500V, 0.08ohm, N-CHANNEL, Si, POWER, MOSFET, ISOTOP-4 Microsemi Corporation IXFR55N50 vs APT50M80JLC
APT51M50J Power Field-Effect Transistor, 51A I(D), 500V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOTOP-4 Microsemi Corporation IXFR55N50 vs APT51M50J

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