Datasheets
IXFH76N07-12 by:

Power Field-Effect Transistor, 76A I(D), 70V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN

Part Details for IXFH76N07-12 by IXYS Corporation

Overview of IXFH76N07-12 by IXYS Corporation

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Price & Stock for IXFH76N07-12

Part # Distributor Description Stock Price Buy
DISTI # 747-IXFH76N07-12
Mouser Electronics MOSFETs 70V 76A RoHS: Compliant 0
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Part Details for IXFH76N07-12

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IXFH76N07-12 Part Data Attributes

IXFH76N07-12 IXYS Corporation
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IXFH76N07-12 IXYS Corporation Power Field-Effect Transistor, 76A I(D), 70V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer IXYS CORP
Part Package Code TO-247
Package Description TO-247, 3 PIN
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 2000 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 70 V
Drain Current-Max (ID) 76 A
Drain-source On Resistance-Max 0.012 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 360 W
Power Dissipation-Max (Abs) 300 W
Pulsed Drain Current-Max (IDM) 304 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 10
Transistor Application SWITCHING
Transistor Element Material SILICON

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