| Harris Semiconductor |
Power Field-Effect Transistor, 14A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
$1.0000 / $3.0000
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| Vishay Intertechnologies |
Power Field-Effect Transistor, 14A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, |
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| Intersil Corporation |
14A, 250V, 0.28ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
$3.2700 / $11.0700
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| New Jersey Semiconductor Products, Inc. |
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$0.8325 / $2.2200
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| International Rectifier |
Power Field-Effect Transistor, 14A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
$0.6750 / $3.0000
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| STMicroelectronics |
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$0.7722 / $3.1200
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| New Jersey Semiconductor Products Inc |
MOSFET Transistor, N-Channel, TO-220AB |
$1.0360 / $2.9600
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| Vishay Siliconix |
Power Field-Effect Transistor, 14A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN |
$1.6500 / $3.0000
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| Fairchild Semiconductor Corporation |
Power Field-Effect Transistor, 14A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
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| Rochester Electronics LLC |
14A, 250V, 0.28ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
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| Samsung Semiconductor |
Power Field-Effect Transistor, 14A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN |
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| Thomson Consumer Electronics |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
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