There are no models available for this part yet.
Overview of IXFH22N60P3 by Littelfuse Inc
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 2 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Industrial Automation
Motor control systems
Price & Stock for IXFH22N60P3 by Littelfuse Inc
| Part # | Manufacturer | Description | Stock | Price | Buy | ||
|---|---|---|---|---|---|---|---|
|
DISTI #
IXFH22N60P3-ND
|
DigiKey | MOSFET N-CH 600V 22A TO247AD Min Qty: 1 Lead time: 44 Weeks Container: Tube | Temporarily Out of Stock |
|
$3.2011 / $6.5100 | Buy Now | |
| Future Electronics | MOSFET DISCRETE RoHS: Compliant pbFree: Yes Min Qty: 300 Package Multiple: 30 Lead time: 44 Weeks Container: Tube | 0Tube |
|
$3.8100 / $4.2000 | Buy Now |
CAD Models for IXFH22N60P3 by Littelfuse Inc
Part Data Attributes for IXFH22N60P3 by Littelfuse Inc
|
|
|
|---|---|
|
Rohs Code
|
Yes
|
|
Part Life Cycle Code
|
Active
|
|
Ihs Manufacturer
|
LITTELFUSE INC
|
|
Reach Compliance Code
|
compliant
|
|
ECCN Code
|
EAR99
|
|
Samacsys Manufacturer
|
LITTELFUSE
|
|
Additional Feature
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AVALANCHE RATED
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|
Avalanche Energy Rating (Eas)
|
400 mJ
|
|
Case Connection
|
DRAIN
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|
Configuration
|
SINGLE WITH BUILT-IN DIODE
|
|
DS Breakdown Voltage-Min
|
600 V
|
|
Drain Current-Max (ID)
|
22 A
|
|
Drain-source On Resistance-Max
|
0.39 Ω
|
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
|
Feedback Cap-Max (Crss)
|
3.4 pF
|
|
JEDEC-95 Code
|
TO-247
|
|
JESD-30 Code
|
R-PSFM-T3
|
|
JESD-609 Code
|
e3
|
|
Number of Elements
|
1
|
|
Number of Terminals
|
3
|
|
Operating Mode
|
ENHANCEMENT MODE
|
|
Operating Temperature-Max
|
150 °C
|
|
Operating Temperature-Min
|
-55 °C
|
|
Package Body Material
|
PLASTIC/EPOXY
|
|
Package Shape
|
RECTANGULAR
|
|
Package Style
|
FLANGE MOUNT
|
|
Peak Reflow Temperature (Cel)
|
260
|
|
Polarity/Channel Type
|
N-CHANNEL
|
|
Power Dissipation-Max (Abs)
|
500 W
|
|
Pulsed Drain Current-Max (IDM)
|
55 A
|
|
Surface Mount
|
NO
|
|
Terminal Finish
|
Matte Tin (Sn)
|
|
Terminal Form
|
THROUGH-HOLE
|
|
Terminal Position
|
SINGLE
|
|
Time@Peak Reflow Temperature-Max (s)
|
10
|
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Transistor Application
|
SWITCHING
|
|
Transistor Element Material
|
SILICON
|
Alternate Parts for IXFH22N60P3
This table gives cross-reference parts and alternative options found for IXFH22N60P3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFH22N60P3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IXTT22N60P | Power Field-Effect Transistor, 22A I(D), 600V, 0.33ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN | Littelfuse Inc | IXFH22N60P3 vs IXTT22N60P |
| IXFH22N60P3 | Power Field-Effect Transistor, 22A I(D), 600V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC, TO-247, 3 PIN | IXYS Corporation | IXFH22N60P3 vs IXFH22N60P3 |
| IXTV26N60P | Power Field-Effect Transistor, 26A I(D), 600V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS220, 3 PIN | IXYS Corporation | IXFH22N60P3 vs IXTV26N60P |
| IXTT26N60P | Power Field-Effect Transistor, 26A I(D), 600V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN | Littelfuse Inc | IXFH22N60P3 vs IXTT26N60P |
| IXFT22N60P | Power Field-Effect Transistor, 22A I(D), 600V, 0.33ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN | Littelfuse Inc | IXFH22N60P3 vs IXFT22N60P |
| IXFH22N60P | Power Field-Effect Transistor, 22A I(D), 600V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN | IXYS Corporation | IXFH22N60P3 vs IXFH22N60P |
| IXFV22N60PS | Power Field-Effect Transistor, 22A I(D), 600V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS220SMD, 3 PIN | IXYS Corporation | IXFH22N60P3 vs IXFV22N60PS |
| IXTQ22N60P | Power Field-Effect Transistor, 22A I(D), 600V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | IXYS Corporation | IXFH22N60P3 vs IXTQ22N60P |
| IXTT22N60P | Power Field-Effect Transistor, 22A I(D), 600V, 0.33ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN | IXYS Corporation | IXFH22N60P3 vs IXTT22N60P |
| IXFT22N60P | Power Field-Effect Transistor, 22A I(D), 600V, 0.33ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN | IXYS Corporation | IXFH22N60P3 vs IXFT22N60P |
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