Part Details for IXBT16N170A by Littelfuse Inc
Overview of IXBT16N170A by Littelfuse Inc
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for IXBT16N170A
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
03AH0384
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Newark | Disc Igbt Bimosfet-High Volt To-268Aa/ Tube |Littelfuse IXBT16N170A Min Qty: 300 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
|
$11.1000 / $11.9500 | Buy Now |
Part Details for IXBT16N170A
IXBT16N170A CAD Models
IXBT16N170A Part Data Attributes:
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IXBT16N170A
Littelfuse Inc
Buy Now
Datasheet
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IXBT16N170A
Littelfuse Inc
Insulated Gate Bipolar Transistor,
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| Part Life Cycle Code | Active | |
| Ihs Manufacturer | LITTELFUSE INC | |
| Package Description | , | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | LITTELFUSE | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 16 A | |
| Collector-Emitter Voltage-Max | 1700 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Fall Time-Max (tf) | 100 ns | |
| Gate-Emitter Thr Voltage-Max | 5.5 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JEDEC-95 Code | TO-268AA | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 150 W | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 350 ns | |
| Turn-off Time-Nom (toff) | 210 ns | |
| Turn-on Time-Nom (ton) | 40 ns | |
| VCEsat-Max | 6 V |