Datasheets
IS49NLC36800-25EWBLI by: Integrated Silicon Solution Inc

DDR DRAM, 8MX36, CMOS, PBGA144, WBGA-144

Part Details for IS49NLC36800-25EWBLI by Integrated Silicon Solution Inc

Overview of IS49NLC36800-25EWBLI by Integrated Silicon Solution Inc

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Applications Consumer Electronics Computing and Data Storage

Price & Stock for IS49NLC36800-25EWBLI

Part # Distributor Description Stock Price Buy
DISTI # 37AC0679
Newark Rldram2 Memory, 288Mbit, X36, Common I/O, 400Mhz, Rohs, Ind. Temp, Trc=15Ns, Wbga |Integrated Silicon Solution (Issi) IS49NLC36800-25EWBLI RoHS: Not Compliant Min Qty: 104 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 100 $24.0600
  • 250 $23.2800
$23.2800 / $24.0600 Buy Now
DISTI # IS49NLC36800-25EWBLI-ND
DigiKey IC DRAM 288MBIT PAR 144TWBGA Lead time: 10 Weeks Container: Tray Temporarily Out of Stock
Buy Now

Part Details for IS49NLC36800-25EWBLI

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IS49NLC36800-25EWBLI Part Data Attributes

IS49NLC36800-25EWBLI Integrated Silicon Solution Inc
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IS49NLC36800-25EWBLI Integrated Silicon Solution Inc DDR DRAM, 8MX36, CMOS, PBGA144, WBGA-144
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INTEGRATED SILICON SOLUTION INC
Package Description TBGA,
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8542.32.00.28
Factory Lead Time 12 Weeks
Access Mode MULTI BANK PAGE BURST
Clock Frequency-Max (fCLK) 400 MHz
I/O Type COMMON
JESD-30 Code R-PBGA-B144
Length 18.5 mm
Memory Density 301989888 bit
Memory IC Type DDR1 DRAM
Memory Width 36
Number of Functions 1
Number of Ports 1
Number of Terminals 144
Number of Words 8388608 words
Number of Words Code 8000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 85 °C
Operating Temperature-Min -40 °C
Organization 8MX36
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code TFBGA
Package Equivalence Code BGA144,12X18,40/32
Package Shape RECTANGULAR
Package Style GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Cel) NOT SPECIFIED
Seated Height-Max 1.2 mm
Self Refresh YES
Sequential Burst Length 2,4,8
Standby Current-Max 0.053 A
Supply Current-Max 1.105 mA
Supply Voltage-Max (Vsup) 1.9 V
Supply Voltage-Min (Vsup) 1.7 V
Supply Voltage-Nom (Vsup) 1.8 V
Surface Mount YES
Technology CMOS
Temperature Grade INDUSTRIAL
Terminal Form BALL
Terminal Pitch 1 mm
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Width 11 mm

Alternate Parts for IS49NLC36800-25EWBLI

This table gives cross-reference parts and alternative options found for IS49NLC36800-25EWBLI. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IS49NLC36800-25EWBLI, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IS49NLC36800-25EBI DDR DRAM, 8MX36, 2.5ns, CMOS, PBGA144, 11 X 18.50 MM, FBGA-144 Integrated Silicon Solution Inc IS49NLC36800-25EWBLI vs IS49NLC36800-25EBI
IS49NLC36800-25EB DDR DRAM, 8MX36, 2.5ns, CMOS, PBGA144, 11 X 18.50 MM, FBGA-144 Integrated Silicon Solution Inc IS49NLC36800-25EWBLI vs IS49NLC36800-25EB
IS49NLC36800-25BI DDR DRAM, 8MX36, 2.5ns, CMOS, PBGA144, 11 X 18.50 MM, FBGA-144 Integrated Silicon Solution Inc IS49NLC36800-25EWBLI vs IS49NLC36800-25BI
IS49NLC36800-25BL DDR DRAM, 8MX36, 2.5ns, CMOS, PBGA144, 11 X 18.50 MM, LEAD FREE, FBGA-144 Integrated Silicon Solution Inc IS49NLC36800-25EWBLI vs IS49NLC36800-25BL
IS49NLC36800-25B DDR DRAM, 8MX36, 2.5ns, CMOS, PBGA144, 11 X 18.50 MM, FBGA-144 Integrated Silicon Solution Inc IS49NLC36800-25EWBLI vs IS49NLC36800-25B
IS49NLC36800-25EBL DDR DRAM, 8MX36, 2.5ns, CMOS, PBGA144, 11 X 18.50 MM, LEAD FREE, FBGA-144 Integrated Silicon Solution Inc IS49NLC36800-25EWBLI vs IS49NLC36800-25EBL
IS49NLC36800-25EWBL DDR DRAM, 8MX36, CMOS, PBGA144, WBGA-144 Integrated Silicon Solution Inc IS49NLC36800-25EWBLI vs IS49NLC36800-25EWBL
IS49NLC36800-25BLI DDR DRAM, 8MX36, 2.5ns, CMOS, PBGA144, 11 X 18.50 MM, LEAD FREE, FBGA-144 Integrated Silicon Solution Inc IS49NLC36800-25EWBLI vs IS49NLC36800-25BLI
Part Number Description Manufacturer Compare
TC59LM836DKB-40 IC 8M X 36 DDR DRAM, 0.6 ns, PBGA144, 11 X 19 MM, 0.80 MM PITCH, PLASTIC, TFBGA-144, Dynamic RAM Toshiba America Electronic Components IS49NLC36800-25EWBLI vs TC59LM836DKB-40
IS49NLC36800-18B DDR DRAM, 8MX36, 1.875ns, CMOS, PBGA144, 11 X 18.50 MM, FBGA-144 Integrated Silicon Solution Inc IS49NLC36800-25EWBLI vs IS49NLC36800-18B
MT49H8M36FM-5IT DDR DRAM, 8MX36, 0.5ns, CMOS, PBGA144, MICRO, BGA-144 Micron Technology Inc IS49NLC36800-25EWBLI vs MT49H8M36FM-5IT
MT49H8M36HT-5 DDR DRAM, 8MX36, 0.5ns, CMOS, PBGA144, LEAD FREE, FBGA-144 Micron Technology Inc IS49NLC36800-25EWBLI vs MT49H8M36HT-5
K4C89363AF-GCFB0 DDR DRAM, 8MX36, 0.5ns, CMOS, PBGA144, 1 MM PITCH, FBGA-144 Samsung Semiconductor IS49NLC36800-25EWBLI vs K4C89363AF-GCFB0
K4C89363AF-GIF50 DDR DRAM, 8MX36, 0.6ns, CMOS, PBGA144, 1 MM PITCH, FBGA-144 Samsung Semiconductor IS49NLC36800-25EWBLI vs K4C89363AF-GIF50
MT49H8M36HU-5IT DDR DRAM, 8MX36, 0.5ns, CMOS, PBGA144, FBGA-144 Micron Technology Inc IS49NLC36800-25EWBLI vs MT49H8M36HU-5IT
IS49NLC36800-25BLI DDR DRAM, 8MX36, 2.5ns, CMOS, PBGA144, 11 X 18.50 MM, LEAD FREE, FBGA-144 Integrated Silicon Solution Inc IS49NLC36800-25EWBLI vs IS49NLC36800-25BLI
IS49NLC36800-25EB DDR DRAM, 8MX36, 2.5ns, CMOS, PBGA144, 11 X 18.50 MM, FBGA-144 Integrated Silicon Solution Inc IS49NLC36800-25EWBLI vs IS49NLC36800-25EB
MT49H8M36CBM-5IT DDR DRAM, 8MX36, 0.5ns, CMOS, PBGA144, LEAD FREE, MICRO, BGA-144 Micron Technology Inc IS49NLC36800-25EWBLI vs MT49H8M36CBM-5IT

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